Spin–Orbit Coupling Effect Bandgaps Engineering of the Lead‐Free Perovskites FABI3 (B = Sn or Ge) Materials for Tandem Solar Cells: First Principle Investigation of Structural and Electronic Properties

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Physica Status Solidi B-basic Solid State Physics Pub Date : 2024-06-22 DOI:10.1002/pssb.202400217
Youssef El Arfaoui, Mohammed Khenfouch, Nabil Habiballah
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Abstract

Pb‐free perovskites are novel compounds that are currently being studied, essentially for their photovoltaic applications. In this article, the hybrid organic–inorganic perovskite for photovoltaic applications is studied. In fact, the structural and electronic properties of the perovskite FABI3 (B = Sn, Ge, or Pb and FA = formamidinium: CH(NH2)2) applying the density functional theory method executed in the Quantum Espresso framework are studied and discussed. The band structures of these perovskites have been presented; it is shown that these perovskites have a semiconductor nature, with a bandgap value of 1.36 eV for FASnI3, 1.72 eV for FAGeI3, and 1.61 eV for FAPbI3. Also, the density of states and partial density of states have been presented and discussed for each of these materials. Indeed, the structural properties of these perovskites are investigated and demonstrated that the optimized value of the lattice parameter is 6.35 Å for the FASnI3, while for the FAGeI3, this value is 6.3 Å and 6.5 Å for FAPbI3. Moreover, the impact of the lattice parameter on the bandgap value of FABI3 (B = Sn, Ge, or Pb) has been investigated, and it has been demonstrated that as the lattice parameter increases, the bandgap increases. The results of this work can be utilized as a guideline for the development of new efficient, lead‐free perovskite devices, including tandem solar cells.
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用于串联太阳能电池的无铅透镜材料 FABI3(B = Sn 或 Ge)的自旋轨道耦合效应带隙工程:结构和电子特性的第一原理研究
无铅过氧化物是目前正在研究的新型化合物,主要用于光伏应用。本文研究了用于光伏应用的有机-无机混合型过氧化物。事实上,FABI3(B = 锡、锗或铅,FA = 甲脒:CH(NH2)2)的结构和电子特性,并在量子 Espresso 框架下应用密度泛函理论方法进行了研究和讨论。结果表明,这些包晶具有半导体性质,FASnI3 的带隙值为 1.36 eV,FAGeI3 为 1.72 eV,FAPbI3 为 1.61 eV。此外,还介绍并讨论了每种材料的状态密度和部分状态密度。事实上,对这些包晶的结构特性进行了研究,结果表明 FASnI3 的优化晶格参数值为 6.35 Å,而 FAGeI3 的优化晶格参数值为 6.3 Å,FAPbI3 的优化晶格参数值为 6.5 Å。此外,还研究了晶格参数对 FABI3(B = Sn、Ge 或 Pb)带隙值的影响,结果表明,随着晶格参数的增加,带隙也会增加。这项工作的结果可作为开发新型高效无铅过氧化物器件(包括串联太阳能电池)的指南。
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来源期刊
Physica Status Solidi B-basic Solid State Physics
Physica Status Solidi B-basic Solid State Physics 物理-物理:凝聚态物理
CiteScore
3.30
自引率
6.20%
发文量
321
审稿时长
2 months
期刊介绍: physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Being among the largest and most important international publications, the pss journals publish review articles, letters and original work as well as special issues and conference contributions. physica status solidi b – basic solid state physics is devoted to topics such as theoretical and experimental investigations of the atomistic and electronic structure of solids in general, phase transitions, electronic and optical properties of low-dimensional, nano-scale, strongly correlated, or disordered systems, superconductivity, magnetism, ferroelectricity etc.
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