BenZhe Zhou, Lei Wang, Yong Chen, QiuLiang Wang, KangShuai Wang, ZiLi Zhang, JianHua Liu
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引用次数: 0
Abstract
Screening current is recognized as one of the critical elements limiting the progression of superconducting magnets toward achieving higher magnetic fields. Currently, most non-insulated (NI) superconducting magnets consider the magnet as insulated when addressing the issue of screening current. However, the bypass current in the NI magnet can modify the actual history of magnetization, so the screening current in NI magnet will be different from that in the insulated magnet. This paper presents a novel method based on the homogenized T-A formulation (T is the current vector potential, and A is the magnetic vector potential), which enables real-time simulation of both the bypass current behavior and the implications of screening current in NI superconducting magnets, even when these magnets contain tens of thousands of turns. We have developed a 32 T NI hybrid superconducting magnet and validated the effectiveness of this method through experiments. Employing this efficacious method, we conducted a comprehensive calculation of screening current in NI magnets, comparing them with insulated magnets in terms of screening current-induced stress (SCIS), screening current-induced field (SCIF), and losses. The results indicate that in the NI insert coils, the sequential excitation of background coils and insert coils induces a reverse screening current, resulting in slightly lower SCIF and SCIS compared to those in the insulated magnets. The method and results can contribute to the enhancement of magnet design and provide valuable insights for the development of ultra-high fields (UHF) NI magnets.
屏蔽电流被认为是限制超导磁体实现更高磁场的关键因素之一。目前,大多数非绝缘(NI)超导磁体在解决屏蔽电流问题时都将磁体视为绝缘体。然而,NI 磁体中的旁路电流会改变磁化的实际历史,因此 NI 磁体中的屏蔽电流将不同于绝缘磁体中的屏蔽电流。本文提出了一种基于同质化 T-A 公式(T 为电流矢量势,A 为磁矢量势)的新方法,可以实时模拟 NI 超导磁体中的旁路电流行为和屏蔽电流的影响,即使这些磁体包含数万匝磁体。我们开发了一种 32 T NI 混合超导磁体,并通过实验验证了这种方法的有效性。利用这种有效的方法,我们对 NI 磁体中的屏蔽电流进行了全面计算,并在屏蔽电流感应应力(SCIS)、屏蔽电流感应场(SCIF)和损耗方面与绝缘磁体进行了比较。结果表明,在 NI 插入线圈中,背景线圈和插入线圈的顺序激励会引起反向屏蔽电流,从而导致 SCIF 和 SCIS 略低于绝缘磁体。该方法和结果有助于改进磁体设计,并为超高场 (UHF) NI 磁体的开发提供了宝贵的见解。
期刊介绍:
Science China Technological Sciences, an academic journal cosponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China, and published by Science China Press, is committed to publishing high-quality, original results in both basic and applied research.
Science China Technological Sciences is published in both print and electronic forms. It is indexed by Science Citation Index.
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