{"title":"Highly Efficient Spin Current Transport Properties in Spintronic Devices Based on Topological Insulator","authors":"Jijun Yun, Li Xi","doi":"10.1002/qute.202400041","DOIUrl":null,"url":null,"abstract":"<p>Recently, topological insulators (TIs) have regained extensive attention in spintronics due to their potential applications in new-generation spintronic devices, following the discovery of the quantum Hall effect and quantum anomalous Hall effect, which introduce the topological concept. In this review, the exotic spin transport phenomena are explored in TIs. The review offers a concise overview of the fundamental principles of TIs, followed by an exploration of diverse fabrication methods for TI materials. Characterization techniques of the topological surface states are also presented. The review delves into the intriguing spin current transport phenomena, focusing on spin-to-charge and charge-to-spin conversions in TI/ferromagnet bilayers, respectively. The review culminates summarizing key insights and project future directions for research on spin transport phenomena in TIs, emphasizing practical implications.</p>","PeriodicalId":72073,"journal":{"name":"Advanced quantum technologies","volume":"7 8","pages":""},"PeriodicalIF":4.4000,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced quantum technologies","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/qute.202400041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
Recently, topological insulators (TIs) have regained extensive attention in spintronics due to their potential applications in new-generation spintronic devices, following the discovery of the quantum Hall effect and quantum anomalous Hall effect, which introduce the topological concept. In this review, the exotic spin transport phenomena are explored in TIs. The review offers a concise overview of the fundamental principles of TIs, followed by an exploration of diverse fabrication methods for TI materials. Characterization techniques of the topological surface states are also presented. The review delves into the intriguing spin current transport phenomena, focusing on spin-to-charge and charge-to-spin conversions in TI/ferromagnet bilayers, respectively. The review culminates summarizing key insights and project future directions for research on spin transport phenomena in TIs, emphasizing practical implications.
最近,继引入拓扑概念的量子霍尔效应和量子反常霍尔效应被发现之后,拓扑绝缘体(TIs)因其在新一代自旋电子器件中的潜在应用而在自旋电子学中重新受到广泛关注。本综述探讨了 TI 中的奇异自旋传输现象。综述简明扼要地概述了拓扑结构的基本原理,随后探讨了拓扑结构材料的各种制造方法。此外,还介绍了拓扑表面态的表征技术。综述深入探讨了引人入胜的自旋电流传输现象,分别侧重于 TI/铁磁体双层材料中自旋到电荷和电荷到自旋的转换。综述最后总结了有关 TI 中自旋传输现象的关键见解和未来研究方向,并强调了实际意义。