Large Area Epitaxial Lateral Overgrowth of Semipolar (11¯$1 \left(\right. \macr \left.\right)$01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography
{"title":"Large Area Epitaxial Lateral Overgrowth of Semipolar (11¯$1 \\left(\\right. \\macr \\left.\\right)$01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography","authors":"Naofumi Takeda, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama","doi":"10.1002/pssb.202400071","DOIUrl":null,"url":null,"abstract":"Selective area growth and epitaxial lateral overgrowth (ELOG) of semipolar (101) GaN stripes are demonstrated on a trench patterned vicinal (001) Si substrate fabricated by a maskless photolithography‐based process. High precision alignment enables selective mask formation to one sidewall of the trench. Selective area growth of GaN stripes is conducted from the (111) plane sidewall of Si, and ELOG region reaches ≈13 μm. The ELOG GaN crystal is dislocation‐free at most areas. The semipolar GaN stripes with atomically flat surface morphology are uniformly obtained. Light‐emitting diode structures with InGaN/GaN multiple quantum wells are grown on the 13‐μm ELOG (101) GaN stripes and a single photoluminescence emission peaked at 485 nm is obtained, suggesting potential for the cost‐effective semipolar micro light‐emitting diode fabrication technologies.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":"46 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi B-basic Solid State Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/pssb.202400071","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
Selective area growth and epitaxial lateral overgrowth (ELOG) of semipolar (101) GaN stripes are demonstrated on a trench patterned vicinal (001) Si substrate fabricated by a maskless photolithography‐based process. High precision alignment enables selective mask formation to one sidewall of the trench. Selective area growth of GaN stripes is conducted from the (111) plane sidewall of Si, and ELOG region reaches ≈13 μm. The ELOG GaN crystal is dislocation‐free at most areas. The semipolar GaN stripes with atomically flat surface morphology are uniformly obtained. Light‐emitting diode structures with InGaN/GaN multiple quantum wells are grown on the 13‐μm ELOG (101) GaN stripes and a single photoluminescence emission peaked at 485 nm is obtained, suggesting potential for the cost‐effective semipolar micro light‐emitting diode fabrication technologies.
期刊介绍:
physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Being among the largest and most important international publications, the pss journals publish review articles, letters and original work as well as special issues and conference contributions.
physica status solidi b – basic solid state physics is devoted to topics such as theoretical and experimental investigations of the atomistic and electronic structure of solids in general, phase transitions, electronic and optical properties of low-dimensional, nano-scale, strongly correlated, or disordered systems, superconductivity, magnetism, ferroelectricity etc.