Large Area Epitaxial Lateral Overgrowth of Semipolar (11¯$1 \left(\right. \macr \left.\right)$01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Physica Status Solidi B-basic Solid State Physics Pub Date : 2024-06-21 DOI:10.1002/pssb.202400071
Naofumi Takeda, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama
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Abstract

Selective area growth and epitaxial lateral overgrowth (ELOG) of semipolar (101) GaN stripes are demonstrated on a trench patterned vicinal (001) Si substrate fabricated by a maskless photolithography‐based process. High precision alignment enables selective mask formation to one sidewall of the trench. Selective area growth of GaN stripes is conducted from the (111) plane sidewall of Si, and ELOG region reaches ≈13 μm. The ELOG GaN crystal is dislocation‐free at most areas. The semipolar GaN stripes with atomically flat surface morphology are uniformly obtained. Light‐emitting diode structures with InGaN/GaN multiple quantum wells are grown on the 13‐μm ELOG (101) GaN stripes and a single photoluminescence emission peaked at 485 nm is obtained, suggesting potential for the cost‐effective semipolar micro light‐emitting diode fabrication technologies.
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在使用无掩模光刻技术制备的图案化硅衬底上大面积外延侧向生长半极性(11¯$1 (left(\right. \macr (left.\right)$01)氮化镓条带
在采用无掩模光刻工艺制造的沟槽图案沧桑(001)硅衬底上,演示了半极性(101)氮化镓条带的选择性面积生长和外延横向过度生长(ELOG)。通过高精度对准,可以在沟槽的一侧壁上选择性地形成掩膜。氮化镓条纹从硅的(111)平面侧壁开始选择性区域生长,ELOG 区域达到 ≈13 μm。ELOG GaN 晶体的大部分区域都没有位错。得到的半极性氮化镓条带具有均匀的原子平整表面形态。在 13 μm 的 ELOG (101) GaN 带上生长出了具有 InGaN/GaN 多量子阱的发光二极管结构,并获得了峰值为 485 nm 的单一光致发光,这表明具有成本效益的半极性微型发光二极管制造技术具有潜力。
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来源期刊
Physica Status Solidi B-basic Solid State Physics
Physica Status Solidi B-basic Solid State Physics 物理-物理:凝聚态物理
CiteScore
3.30
自引率
6.20%
发文量
321
审稿时长
2 months
期刊介绍: physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Being among the largest and most important international publications, the pss journals publish review articles, letters and original work as well as special issues and conference contributions. physica status solidi b – basic solid state physics is devoted to topics such as theoretical and experimental investigations of the atomistic and electronic structure of solids in general, phase transitions, electronic and optical properties of low-dimensional, nano-scale, strongly correlated, or disordered systems, superconductivity, magnetism, ferroelectricity etc.
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