M MUSA SAAD H-E, ABEER M KHAIRY, MOHAMED Y SHIRGAWI, A H ABDELRAHMAN, A ELHAG, B O ALSOBHI
{"title":"Crystal structure and optoelectronic properties of Rb-based metal halide perovskites RbSiI3 and RbGeI3: GGA–PBE study","authors":"M MUSA SAAD H-E, ABEER M KHAIRY, MOHAMED Y SHIRGAWI, A H ABDELRAHMAN, A ELHAG, B O ALSOBHI","doi":"10.1007/s12034-024-03209-0","DOIUrl":null,"url":null,"abstract":"<p>In this paper, the crystal structure, optical and electronic properties of two related rubidium iodide halide perovskites RbSiI<sub>3</sub> and RbGeI<sub>3</sub> are investigated and discussed thoroughly. The calculations of these properties are performed using the generalized gradient approximation under Perdew–Burke–Ernzerhof functional (GGA–PBE). Also, the structural optimizations and accurate optoelectronic properties have been achieved by exploiting full-potential linearized augmented plane wave method (FP-LAPW). Analysis of optimization results exposed that the volume per unit cell and lattice parameter (<i>a</i><sub>0</sub> = 5.8348 Å (RbSiI<sub>3</sub>)) and (<i>a</i><sub>0</sub> = 5.9631 Å (RbGeI<sub>3</sub>)) are closely in agreement with the previous results. In addition, the calculated values of tolerance factor (<i>T</i><sub>F</sub> ≈ 1.0) satisfy the creation criterion for perovskites, and the negative and small values of formation energy (Δ<i>F</i><sub>E</sub>) confirm the chemical stability of studied compounds. The results of density of states and band structures reveal that RbSiI<sub>3</sub> and RbGeI<sub>3</sub> are nonmagnetic semiconductors having a proper direct energy gap (<i>E</i><sub>g</sub>) of 0.465 and 0.953 eV, respectively, along the M–M symmetry directions in the first Brillouin zone. The 2-D distributions of charge density confirm that the chemical bonding of Rb–I and Si/Ge–I bonds obey the covalent and ionic nature. Moreover, we have calculated and discussed the optoelectronic properties, real <i>ε</i><sub>1</sub>(<i>ω</i>) and imaginary <i>ε</i><sub>2</sub>(<i>ω</i>) functions, optical absorption <i>α</i>(<i>ω</i>), reflectivity <i>R</i>(<i>ω</i>) and refractivity <i>n</i>(<i>ω</i>). The results obtained in this study like structural stability, suitable <i>E</i><sub>g</sub> and highly accurate optical absorption <i>α</i>(<i>ω</i>) of visible light waves, indicate the possible exploitation of semiconductors RbSiI<sub>3</sub> and RbGeI<sub>3</sub> and make them candidate materials for optoelectronics, such as photovoltaic solar cells, photosensors, photodetectors and photodiodes devices.</p>","PeriodicalId":502,"journal":{"name":"Bulletin of Materials Science","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1007/s12034-024-03209-0","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the crystal structure, optical and electronic properties of two related rubidium iodide halide perovskites RbSiI3 and RbGeI3 are investigated and discussed thoroughly. The calculations of these properties are performed using the generalized gradient approximation under Perdew–Burke–Ernzerhof functional (GGA–PBE). Also, the structural optimizations and accurate optoelectronic properties have been achieved by exploiting full-potential linearized augmented plane wave method (FP-LAPW). Analysis of optimization results exposed that the volume per unit cell and lattice parameter (a0 = 5.8348 Å (RbSiI3)) and (a0 = 5.9631 Å (RbGeI3)) are closely in agreement with the previous results. In addition, the calculated values of tolerance factor (TF ≈ 1.0) satisfy the creation criterion for perovskites, and the negative and small values of formation energy (ΔFE) confirm the chemical stability of studied compounds. The results of density of states and band structures reveal that RbSiI3 and RbGeI3 are nonmagnetic semiconductors having a proper direct energy gap (Eg) of 0.465 and 0.953 eV, respectively, along the M–M symmetry directions in the first Brillouin zone. The 2-D distributions of charge density confirm that the chemical bonding of Rb–I and Si/Ge–I bonds obey the covalent and ionic nature. Moreover, we have calculated and discussed the optoelectronic properties, real ε1(ω) and imaginary ε2(ω) functions, optical absorption α(ω), reflectivity R(ω) and refractivity n(ω). The results obtained in this study like structural stability, suitable Eg and highly accurate optical absorption α(ω) of visible light waves, indicate the possible exploitation of semiconductors RbSiI3 and RbGeI3 and make them candidate materials for optoelectronics, such as photovoltaic solar cells, photosensors, photodetectors and photodiodes devices.
期刊介绍:
The Bulletin of Materials Science is a bi-monthly journal being published by the Indian Academy of Sciences in collaboration with the Materials Research Society of India and the Indian National Science Academy. The journal publishes original research articles, review articles and rapid communications in all areas of materials science. The journal also publishes from time to time important Conference Symposia/ Proceedings which are of interest to materials scientists. It has an International Advisory Editorial Board and an Editorial Committee. The Bulletin accords high importance to the quality of articles published and to keep at a minimum the processing time of papers submitted for publication.