{"title":"High-performance flexible photodetectors based on CdTe/MoS<sub>2</sub> heterojunction.","authors":"Shuo Yang, Yunjie Liu, Yupeng Wu, Fuhai Guo, Mingcong Zhang, Xinru Zhu, Ruqing Xu, Lanzhong Hao","doi":"10.1039/d4nr01718h","DOIUrl":null,"url":null,"abstract":"<p><p>Flexible photodetectors have attracted escalating attention due to their pivotal role in next-generation wearable optoelectronic devices. This work presents high-performance photodetector devices based on CdTe/MoS<sub>2</sub> heterojunctions, showcasing outstanding photodetecting and distinctive mechanical properties. The MoS<sub>2</sub> film was exfoliated from bulk layered MoS<sub>2</sub> and covered by a sputtered ultrathin CdTe film (∼8.4 nm) to form a heterojunction. Benefitting from the photovoltaic effect induced by the built-in electrical field near the high-quality interface, the fabricated CdTe/MoS<sub>2</sub> heterojunction photodetector can operate as a self-powered photodetector without any external bias voltage, especially showing a high photodetectivity of 5.84 × 10<sup>11</sup> Jones, remarkable photoresponsivity of 270.3 mA W<sup>-1</sup>, fast photoresponse with a rise/fall time of ∼44.8/134.2 μs and excellent bending durability. These results demonstrate that the CdTe/MoS<sub>2</sub> heterojunctions could have significant potential for future applications in optoelectronic devices.</p>","PeriodicalId":92,"journal":{"name":"Nanoscale","volume":null,"pages":null},"PeriodicalIF":5.8000,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1039/d4nr01718h","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Flexible photodetectors have attracted escalating attention due to their pivotal role in next-generation wearable optoelectronic devices. This work presents high-performance photodetector devices based on CdTe/MoS2 heterojunctions, showcasing outstanding photodetecting and distinctive mechanical properties. The MoS2 film was exfoliated from bulk layered MoS2 and covered by a sputtered ultrathin CdTe film (∼8.4 nm) to form a heterojunction. Benefitting from the photovoltaic effect induced by the built-in electrical field near the high-quality interface, the fabricated CdTe/MoS2 heterojunction photodetector can operate as a self-powered photodetector without any external bias voltage, especially showing a high photodetectivity of 5.84 × 1011 Jones, remarkable photoresponsivity of 270.3 mA W-1, fast photoresponse with a rise/fall time of ∼44.8/134.2 μs and excellent bending durability. These results demonstrate that the CdTe/MoS2 heterojunctions could have significant potential for future applications in optoelectronic devices.
期刊介绍:
Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers.Highly interdisciplinary, this journal appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics.