Tailoring Dzyaloshinskii-Moriya Interaction and Spin-Hall Topological Hall Effect in Insulating Magnetic Oxides by Interface Engineering.

IF 14.3 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Advanced Science Pub Date : 2024-07-10 DOI:10.1002/advs.202403852
Zedong Xu, Yuanmin Zhu, Yuming Wang, Xiaowen Li, Qi Liu, Kai Chen, Junling Wang, Yong Jiang, Lang Chen
{"title":"Tailoring Dzyaloshinskii-Moriya Interaction and Spin-Hall Topological Hall Effect in Insulating Magnetic Oxides by Interface Engineering.","authors":"Zedong Xu, Yuanmin Zhu, Yuming Wang, Xiaowen Li, Qi Liu, Kai Chen, Junling Wang, Yong Jiang, Lang Chen","doi":"10.1002/advs.202403852","DOIUrl":null,"url":null,"abstract":"<p><p>Chiral spin textures, as exotic phases in magnetic materials, hold immense promise for revolutionizing logic, and memory applications. Recently, chiral spin textures have been observed in centrosymmetric magnetic insulators (FMI), due to an interfacial Dzyaloshinskii-Moriya interaction (iDMI). However, the source and origin of this iDMI remain enigmatic in magnetic insulator systems. Here, the source and origin of the iDMI in Pt/Y<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub> (YIG)/substrate structures are deeply delved by examining the spin-Hall topological Hall effect (SH-THE), an indication of chiral spin textures formed due to an iDMI. Through carefully modifying the interfacial chemical composition of Pt/YIG/substrate with a nonmagnetic Al<sup>3+</sup> doping, the obvious dependence of SH-THE on the interfacial chemical composition for both the heavy metal (HM)/FMI and FMI/substrate interfaces is observed. The results reveal that both interfaces contribute to the strength of the iDMI, and the iDMI arises due to strong spin-orbit coupling and inversion symmetry breaking at both interfaces in HM/FMI/substrate. Importantly, it is shown that nonmagnetic substitution and interface engineering can significantly tune the SH-THE and iDMI in ferrimagnetic iron garnets. The approach offers a viable route to tailor the iDMI and associated chiral spin textures in low-damping insulating magnetic oxides, thus advancing the field of spintronics.</p>","PeriodicalId":117,"journal":{"name":"Advanced Science","volume":null,"pages":null},"PeriodicalIF":14.3000,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/advs.202403852","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Chiral spin textures, as exotic phases in magnetic materials, hold immense promise for revolutionizing logic, and memory applications. Recently, chiral spin textures have been observed in centrosymmetric magnetic insulators (FMI), due to an interfacial Dzyaloshinskii-Moriya interaction (iDMI). However, the source and origin of this iDMI remain enigmatic in magnetic insulator systems. Here, the source and origin of the iDMI in Pt/Y3Fe5O12 (YIG)/substrate structures are deeply delved by examining the spin-Hall topological Hall effect (SH-THE), an indication of chiral spin textures formed due to an iDMI. Through carefully modifying the interfacial chemical composition of Pt/YIG/substrate with a nonmagnetic Al3+ doping, the obvious dependence of SH-THE on the interfacial chemical composition for both the heavy metal (HM)/FMI and FMI/substrate interfaces is observed. The results reveal that both interfaces contribute to the strength of the iDMI, and the iDMI arises due to strong spin-orbit coupling and inversion symmetry breaking at both interfaces in HM/FMI/substrate. Importantly, it is shown that nonmagnetic substitution and interface engineering can significantly tune the SH-THE and iDMI in ferrimagnetic iron garnets. The approach offers a viable route to tailor the iDMI and associated chiral spin textures in low-damping insulating magnetic oxides, thus advancing the field of spintronics.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
通过界面工程定制绝缘磁性氧化物中的 Dzyaloshinskii-Moriya 相互作用和自旋-霍尔拓扑霍尔效应。
手性自旋纹理是磁性材料中的奇异相位,有望彻底改变逻辑和内存应用。最近,由于界面 Dzyaloshinskii-Moriya 相互作用(iDMI),人们在中心对称磁绝缘体(FMI)中观察到了手性自旋纹理。然而,在磁绝缘体系统中,这种 iDMI 的来源和起源仍然是个谜。本文通过研究自旋-霍尔拓扑霍尔效应(SH-THE),深入探讨了 Pt/Y3Fe5O12 (YIG)/substrate 结构中 iDMI 的来源和起源。通过用非磁性 Al3+ 掺杂物仔细改变 Pt/YIG/substrate 的界面化学成分,观察到重金属 (HM) /FMI 和 FMI/substrate 界面的 SH-THE 与界面化学成分的明显相关性。结果表明,两个界面都对 iDMI 的强度有贡献,而 iDMI 的产生是由于 HM/FMI/substrate 两个界面上的强自旋轨道耦合和反转对称性破坏。重要的是,研究表明非磁性替代和界面工程可以显著调节铁磁性铁榴石中的 SH-THE 和 iDMI。这种方法为定制低阻尼绝缘磁性氧化物中的 iDMI 和相关手性自旋纹理提供了一条可行的途径,从而推动了自旋电子学领域的发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Advanced Science
Advanced Science CHEMISTRY, MULTIDISCIPLINARYNANOSCIENCE &-NANOSCIENCE & NANOTECHNOLOGY
CiteScore
18.90
自引率
2.60%
发文量
1602
审稿时长
1.9 months
期刊介绍: Advanced Science is a prestigious open access journal that focuses on interdisciplinary research in materials science, physics, chemistry, medical and life sciences, and engineering. The journal aims to promote cutting-edge research by employing a rigorous and impartial review process. It is committed to presenting research articles with the highest quality production standards, ensuring maximum accessibility of top scientific findings. With its vibrant and innovative publication platform, Advanced Science seeks to revolutionize the dissemination and organization of scientific knowledge.
期刊最新文献
Exfoliated 2D Nanosheet-Based Conjugated Polymer Composites with P-N Heterojunction Interfaces for Highly Efficient Electrocatalytic Hydrogen Evolution. Extracellular Matrix Sulfation in the Tumor Microenvironment Stimulates Cancer Stemness and Invasiveness. Forkhead Box Protein K1 Promotes Chronic Kidney Disease by Driving Glycolysis in Tubular Epithelial Cells. Origami Morphing Surfaces with Arrayed Quasi-Rigid-Foldable Polyhedrons. Parity-Frequency-Space Elastic Spin Control of Wave Routing in Topological Phononic Circuits.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1