{"title":"An investigation of 60Co gamma radiation induced damage in N-channel MOSFETS at cryogenic temperature.","authors":"Arshiya Anjum, Darshan Muddubasavanna, Pushpa Nagaraj, Gnana Prakash Akkanagowda Patel","doi":"10.1093/rpd/ncae013","DOIUrl":null,"url":null,"abstract":"<p><p>N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 60Co gamma radiation in the dose range of 100 krad to 6 Mrad at cryogenic (77 K) and room temperatures (300 K). The MOS devices irradiated at 77 K and 300 K were characterized at 77 K and 300 K respectively. The different electrical parameters of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot) and mobility of the charge carriers (μ) were studied as a function of total dose. A considerable increase in ΔNit and ΔNot and decrease in Vth was observed after irradiation. The 77 K irradiation results were then compared with 300 K irradiation results and found that the degradation in the electrical characteristics is more for the devices irradiated at 300 K.</p>","PeriodicalId":20795,"journal":{"name":"Radiation protection dosimetry","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radiation protection dosimetry","FirstCategoryId":"93","ListUrlMain":"https://doi.org/10.1093/rpd/ncae013","RegionNum":4,"RegionCategory":"环境科学与生态学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENVIRONMENTAL SCIENCES","Score":null,"Total":0}
引用次数: 0
Abstract
N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 60Co gamma radiation in the dose range of 100 krad to 6 Mrad at cryogenic (77 K) and room temperatures (300 K). The MOS devices irradiated at 77 K and 300 K were characterized at 77 K and 300 K respectively. The different electrical parameters of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot) and mobility of the charge carriers (μ) were studied as a function of total dose. A considerable increase in ΔNit and ΔNot and decrease in Vth was observed after irradiation. The 77 K irradiation results were then compared with 300 K irradiation results and found that the degradation in the electrical characteristics is more for the devices irradiated at 300 K.
期刊介绍：
Radiation Protection Dosimetry covers all aspects of personal and environmental dosimetry and monitoring, for both ionising and non-ionising radiations. This includes biological aspects, physical concepts, biophysical dosimetry, external and internal personal dosimetry and monitoring, environmental and workplace monitoring, accident dosimetry, and dosimetry related to the protection of patients. Particular emphasis is placed on papers covering the fundamentals of dosimetry; units, radiation quantities and conversion factors. Papers covering archaeological dating are included only if the fundamental measurement method or technique, such as thermoluminescence, has direct application to personal dosimetry measurements. Papers covering the dosimetric aspects of radon or other naturally occurring radioactive materials and low level radiation are included. Animal experiments and ecological sample measurements are not included unless there is a significant relevant content reason.
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