Facile Growth of Zinc Oxysulfide Nano Thin Film-based Visible Light Photosensor by Hydrothermal Method

IF 17.7 1区 化学 Q1 CHEMISTRY, MULTIDISCIPLINARY Accounts of Chemical Research Pub Date : 2024-07-08 DOI:10.1149/2162-8777/ad6036
Ajeet Gupta, Avneesh Kumar, Surbhi Surbhi, Mudit P. Srivastava, D. Rana
{"title":"Facile Growth of Zinc Oxysulfide Nano Thin Film-based Visible Light Photosensor by Hydrothermal Method","authors":"Ajeet Gupta, Avneesh Kumar, Surbhi Surbhi, Mudit P. Srivastava, D. Rana","doi":"10.1149/2162-8777/ad6036","DOIUrl":null,"url":null,"abstract":"\n Zinc oxysulfide (ZnOS) nano-thin film has been deposited on a p-type silicon and glass substrate via the hydrothermal deposition method at a temperature of 200ºC. The crystallographic information and morphological analysis of zinc oxysulfide (ZnOS) thin film have been obtained using X-ray diffraction (XRD) patterns and field effect scanning electron microscopy (FESEM). The ZnOS thin film chemical composition was examined using energy-dispersive X-ray spectroscopy (EDX). Ultraviolet-visible (UV-Vis) and photoluminescence (PL) spectroscopy have been utilized for optical analysis. The electrical and electro-optical measurements of ZnOS thin film have been carried out by I-V characteristics in the visible light environment with a power density of 30 mW/cm2. Zinc oxysulfide (ZnOS) thin film was found to be an excellent example of simple responsive photodetection in visible light. The ZnOS thin film has a response time of 1.46 s and a recovery time is equal to 1.32 s. The specific detectivity of the deposited thin film was found to be 3.81×108 Jones. The responsivity of the deposited thin film is found 7.08×102 mA/W. Keywords: Zinc oxysulfide, hydrothermal method, heterojunction, photosensor.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":"118 36","pages":""},"PeriodicalIF":17.7000,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad6036","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Zinc oxysulfide (ZnOS) nano-thin film has been deposited on a p-type silicon and glass substrate via the hydrothermal deposition method at a temperature of 200ºC. The crystallographic information and morphological analysis of zinc oxysulfide (ZnOS) thin film have been obtained using X-ray diffraction (XRD) patterns and field effect scanning electron microscopy (FESEM). The ZnOS thin film chemical composition was examined using energy-dispersive X-ray spectroscopy (EDX). Ultraviolet-visible (UV-Vis) and photoluminescence (PL) spectroscopy have been utilized for optical analysis. The electrical and electro-optical measurements of ZnOS thin film have been carried out by I-V characteristics in the visible light environment with a power density of 30 mW/cm2. Zinc oxysulfide (ZnOS) thin film was found to be an excellent example of simple responsive photodetection in visible light. The ZnOS thin film has a response time of 1.46 s and a recovery time is equal to 1.32 s. The specific detectivity of the deposited thin film was found to be 3.81×108 Jones. The responsivity of the deposited thin film is found 7.08×102 mA/W. Keywords: Zinc oxysulfide, hydrothermal method, heterojunction, photosensor.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
利用水热法轻松生长基于氧化锌纳米薄膜的可见光光传感器
氧化锌(ZnOS)纳米薄膜通过水热沉积法沉积在 p 型硅和玻璃衬底上,沉积温度为 200ºC。利用 X 射线衍射(XRD)图和场效应扫描电子显微镜(FESEM)获得了氧化锌(ZnOS)薄膜的晶体学信息和形态分析。利用能量色散 X 射线光谱(EDX)检测了氧化锌(ZnOS)薄膜的化学成分。紫外-可见(UV-Vis)和光致发光(PL)光谱用于光学分析。在功率密度为 30 mW/cm2 的可见光环境下,通过 I-V 特性对 ZnOS 薄膜进行了电学和电光测量。研究发现,氧化锌(ZnOS)薄膜是在可见光下进行简单响应光检测的极佳范例。ZnOS 薄膜的响应时间为 1.46 秒,恢复时间为 1.32 秒。沉积薄膜的响应率为 7.08×102 mA/W。关键词:氧化锌氧化锌 水热法 异质结 光传感器
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Accounts of Chemical Research
Accounts of Chemical Research 化学-化学综合
CiteScore
31.40
自引率
1.10%
发文量
312
审稿时长
2 months
期刊介绍: Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
期刊最新文献
Corrigendum to "Do All Isolated Traumatic Subarachnoid Hemorrhages Need to Be Transferred to a Level 1 Trauma Center?" Chemical Editing of Proteins: From a Specific Residue to Functional Domains. Asymmetric Alkyne Transformation via Gold/Organo Synergistic Catalysis. Function Decoupling and Modular Platform: Emerging Design Principles for MOF Luminescent Sensing. Computation-Driven Experimental Discovery of Reactivity Space of Organoboron Compounds.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1