STUDY OF THE CORROSION RESISTANCE OF CU(CO,NI)BI2 O4 FILMS WHEN EXPOSED TO AGGRESSIVE ENVIRONMENTS

M. T. Idinov, A. Kozlovskiy, A. B. Kasymov, A. Gradoboev
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Abstract

The work examines the effect of substitution of copper with cobalt and nickel in the composition of CuBi2 O4 films obtained using the electrochemical deposition method. The substitution was initiated by addition of cobalt or nickel sulfates to the sulfuric acid electrolyte solution, which made it possible to obtain films with a tetragonal type of crystal lattice characteristic of the CuBi2 O4 phase. Moreover, an analysis of the structural parameters and changes in the elemental composition of the films showed that the addition of nickel and cobalt sulfates to the electrolyte leads to the formation of a tetragonal phase according to the type of substitution associated with the partial replacement of copper by nickel or cobalt, depending on the composition of the electrolyte solution. During simulation of the film degradation processes under external influences, the results of corrosion tests of CuBi2 O4 films in the aggressive environment of a model solution of 0.1 M NaCl at different ambient temperatures were obtained. The dependences of changes in the structural ordering degree and the softening degree of the films under study were determined depending on the time spent in an aggressive environment. The substitution of copper with cobalt or nickel has been found to increase the resistance of the studied films to degradation and oxidation, indicating a positive substitution effect, reducing the degradation rate of the surface of the films in contact with the aggressive medium.
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研究暴露于侵蚀性环境中的 Cu(co,ni)bi2 o4 薄膜的耐腐蚀性能
这项研究探讨了在使用电化学沉积法获得的 CuBi2 O4 薄膜成分中用钴和镍替代铜的影响。通过在硫酸电解质溶液中添加钴或镍硫酸盐来进行替代,从而获得了具有 CuBi2 O4 晶格特征的四方型薄膜。此外,对薄膜结构参数和元素组成变化的分析表明,根据电解质溶液组成的不同,在电解质中加入镍和钴硫酸盐会导致形成与镍或钴部分取代铜相关的置换类型的四方相。在模拟外部影响下的薄膜降解过程时,获得了 CuBi2 O4 薄膜在不同环境温度下,在 0.1 M NaCl 模型溶液的侵蚀环境中的腐蚀测试结果。根据在侵蚀性环境中停留的时间,确定了所研究薄膜的结构有序度和软化度变化的相关性。研究发现,用钴或镍替代铜可提高所研究薄膜的抗降解和抗氧化能力,这表明存在正向替代效应,可降低与侵蚀性介质接触的薄膜表面的降解率。
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