Ligand Engineering for Indium-Based III–V Semiconductor Nanocrystals: A Review on Recent Process

Abstract

This review provides a comprehensive overview of recent ligand engineering strategies for indium-based III–V semiconductor nanocrystals (NCs), focusing specifically on indium phosphide (InP) and indium arsenide (InAs). These materials have gained significant research interest as active substances compliant with the restriction of hazardous substances directive (RoHS) for advanced optoelectronic applications. Ligands attached to the NC surfaces play critical roles in determining the physical characteristics of the materials, including their structure, size, colloidal stability, electronic properties, and associated optophysical processes. Hence, practical applications of InP and InAs NCs require a good understanding of these ligands. Moreover, recent advances have demonstrated the importance of selecting appropriate ligands for enhancing the electronic and optical performances of InP and InAs NC-based electronic devices such as thin-film transistors, photovoltaic devices, photodetectors, and light-emitting devices. This review highlights the recent progress, technical challenges, and future directions in the context of ligand engineering to realize high-performance InP and InAs NC-based electronic devices.