Insights into High-Dose Helium Implantation of Silicon

IF 0.6 4区 材料科学 Q4 CRYSTALLOGRAPHY Crystallography Reports Pub Date : 2024-07-25 DOI:10.1134/S1063774524600340
P. A. Aleksandrov, O. V. Emelyanova, S. G. Shemardov, D. N. Khmelenin, A. L. Vasiliev
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Abstract

The paper reports an analysis of surface morphology variation and cavity pattern formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected to post-implantation annealing and in absence of post-implantation treatment. For instance, implantation with helium ions to fluences below 3 × 1017 He+/cm2 without post-implantation annealing does not affect the surface morphology; while annealing of samples implanted with fluences of 2 × 1017 He+/cm2 and higher promotes flaking.

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对高剂量氦植入硅的见解
摘要 本文报告了在不同条件下离子注入和植入后退火诱导硅单晶表面形貌变化和空穴图案形成的分析。对经过植入后退火和未经过植入后处理的样品,确定了促进表面侵蚀所需的临界植入剂量。例如,以低于 3 × 1017 He+/cm2 的通量植入氦离子而不进行植入后退火处理不会影响表面形态;而以 2 × 1017 He+/cm2 或更高的通量植入的样品,其退火处理会导致剥落。
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来源期刊
Crystallography Reports
Crystallography Reports 化学-晶体学
CiteScore
1.10
自引率
28.60%
发文量
96
审稿时长
4-8 weeks
期刊介绍: Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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