Insights into High-Dose Helium Implantation of Silicon

IF 0.6 4区 材料科学 Q4 CRYSTALLOGRAPHY Crystallography Reports Pub Date : 2024-07-25 DOI:10.1134/S1063774524600340
P. A. Aleksandrov, O. V. Emelyanova, S. G. Shemardov, D. N. Khmelenin, A. L. Vasiliev
{"title":"Insights into High-Dose Helium Implantation of Silicon","authors":"P. A. Aleksandrov,&nbsp;O. V. Emelyanova,&nbsp;S. G. Shemardov,&nbsp;D. N. Khmelenin,&nbsp;A. L. Vasiliev","doi":"10.1134/S1063774524600340","DOIUrl":null,"url":null,"abstract":"<p>The paper reports an analysis of surface morphology variation and cavity pattern formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected to post-implantation annealing and in absence of post-implantation treatment. For instance, implantation with helium ions to fluences below 3 × 10<sup>17</sup> He<sup>+</sup>/cm<sup>2</sup> without post-implantation annealing does not affect the surface morphology; while annealing of samples implanted with fluences of 2 × 10<sup>17</sup> He<sup>+</sup>/cm<sup>2</sup> and higher promotes flaking.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 3","pages":"380 - 389"},"PeriodicalIF":0.6000,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystallography Reports","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S1063774524600340","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0

Abstract

The paper reports an analysis of surface morphology variation and cavity pattern formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected to post-implantation annealing and in absence of post-implantation treatment. For instance, implantation with helium ions to fluences below 3 × 1017 He+/cm2 without post-implantation annealing does not affect the surface morphology; while annealing of samples implanted with fluences of 2 × 1017 He+/cm2 and higher promotes flaking.

Abstract Image

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
对高剂量氦植入硅的见解
摘要 本文报告了在不同条件下离子注入和植入后退火诱导硅单晶表面形貌变化和空穴图案形成的分析。对经过植入后退火和未经过植入后处理的样品,确定了促进表面侵蚀所需的临界植入剂量。例如,以低于 3 × 1017 He+/cm2 的通量植入氦离子而不进行植入后退火处理不会影响表面形态;而以 2 × 1017 He+/cm2 或更高的通量植入的样品,其退火处理会导致剥落。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Crystallography Reports
Crystallography Reports 化学-晶体学
CiteScore
1.10
自引率
28.60%
发文量
96
审稿时长
4-8 weeks
期刊介绍: Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
期刊最新文献
Transition State of Matter in the Fluctuation Model of Crystal Growth Study of Defect and Spectral Characteristics of Light Emitting Diodes with Multiple InGaN/GaN Quantum Wells on Patterned Sapphire Substrates Crystals of para-Quaterphenyl and Its Trimethylsilyl Derivative. I: Growth from Solutions, Structure, and Crystal Chemical Analysis by the Hirschfeld Surface Method Effect of Annealing of Ca3TaGa3Si2O14 Catangasite Crystals on Their Optical Activity Photopolymerization of the Langmuir‒Schaefer Films of Symmetrical Diynylic N-Arylcarbamate Molecules with Different Numbers of СН2 Groups in Spacers
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1