Surface plasmon decorated InGaO deep-UV photodetector array for image sensing and water quality monitoring via highly effective hot electron excitation and interfacial injection

IF 4.4 2区 工程技术 Q1 ENGINEERING, MULTIDISCIPLINARY Science China Technological Sciences Pub Date : 2024-07-23 DOI:10.1007/s11431-024-2660-1
LinCong Shu, ShuLin Sha, ZhaoYing Xi, Lei Li, SuHao Yao, JiaHan Zhang, XueQiang Ji, ShaoHui Zhang, Ang Bian, MingMing Jiang, YuFeng Guo, WeiHua Tang, Zeng Liu
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Abstract

In addition to the plasmon-mediated resonant coupling mechanism, the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications. This study introduces a sophisticated design for a solar-blind ultraviolet (UV) detector array using linear In-doped Ga2O3 (InGaO) modulated by platinum (Pt) nanoparticles (PtNPs). The construction of this array involves depositing a thin film of Ga2O3 through the plasmonenhanced chemical vapor deposition (PECVD) technique. Subsequently, PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process. The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons. This process is facilitated by non-radiative decay processes induced by PtNPs. Notably, the array achieves maximum responsivity (R) of 353 mA/W, external quantum efficiency (EQE) of 173%, detectivity (D*) of approximately 1013 Jones, and photoconductive gain of 1.58. In addition, the standard deviation for photocurrent stays below 17% for more than 80% of the array units within the array. Subsequently, the application of this array extends to photon detection in the deep-UV (DUV) range. This includes critical areas such as imaging sensing and water quality monitoring. By leveraging surface plasmon coupling, the array achieves high-performance DUV photon detection. This approach enables a broad spectrum of practical applications, underscoring the significant potential of this technology for the advancement of DUV detectors.

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通过高效热电子激发和界面注入实现表面等离子体装饰的 InGaO 深紫外光探测器阵列,用于图像传感和水质监测
除了等离子体介导的共振耦合机制外,等离子体诱导的热电子激发也为开发适用于各种应用的高性能光电器件提供了一条大有可为的途径。本研究介绍了利用铂(Pt)纳米粒子(PtNPs)调制的线性铟掺杂氧化镓(InGaO)太阳盲紫外线(UV)探测器阵列的复杂设计。该阵列的构造包括通过等离子体增强化学气相沉积(PECVD)技术沉积 Ga2O3 薄膜。随后,通过射频磁控溅射和退火工艺合成了 PtNPs。由于产生了高能热电子,这些高度均匀阵列的性能显著提高。PtNPs 诱导的非辐射衰变过程促进了这一过程。值得注意的是,该阵列实现了 353 mA/W 的最大响应率 (R)、173% 的外部量子效率 (EQE)、约 1013 Jones 的检测率 (D*) 以及 1.58 的光电导增益。此外,阵列内超过 80% 的阵列单元的光电流标准偏差保持在 17% 以下。随后,该阵列的应用扩展到深紫外(DUV)范围内的光子检测。这包括成像传感和水质监测等关键领域。通过利用表面等离子体耦合,该阵列实现了高性能 DUV 光子检测。这种方法实现了广泛的实际应用,彰显了该技术在推动深紫外探测器发展方面的巨大潜力。
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来源期刊
Science China Technological Sciences
Science China Technological Sciences ENGINEERING, MULTIDISCIPLINARY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
8.40
自引率
10.90%
发文量
4380
审稿时长
3.3 months
期刊介绍: Science China Technological Sciences, an academic journal cosponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China, and published by Science China Press, is committed to publishing high-quality, original results in both basic and applied research. Science China Technological Sciences is published in both print and electronic forms. It is indexed by Science Citation Index. Categories of articles: Reviews summarize representative results and achievements in a particular topic or an area, comment on the current state of research, and advise on the research directions. The author’s own opinion and related discussion is requested. Research papers report on important original results in all areas of technological sciences. Brief reports present short reports in a timely manner of the latest important results.
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