Synthesis, physico-chemical characterization, DFT simulation, and field electron behaviour of 2D layered Ti3C2Tx MXene nanosheets

Priyanka R Sumbe, Ujjwala Chhote, Gopal Sanyal, Brahmananda Chakraborty, Ahmed Sayeed and Mahendra A More
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Abstract

Nanostructures of Ti3C2Tx, one of the members of the MXenes family, have been successfully prepared by chemical etching of Al from Ti3AlC2 (MAX phase) using Hydrofluoric Acid (HF) for various etching durations at room temperature. The phase, morphological, structural, and chemical analysis was performed using XRD, FESEM, TEM, Raman, and x-ray photoelectron spectroscopy. The surface morphology of as-synthesized Ti3C2Tx (MXene) phase is characterized by stacks of layered sheets like structures. Field electron emission (FEE) behaviour was investigated at the base pressure of 1 × 10−8 mbar. The pristine Ti3AlC2 (MAX) and Ti3C2Tx (MXene) nanosheets emitters showed values of turn-on field (defined at current density ∼ 1 μA cm−2) as 4.18 and 1.67 V μm−1, respectively. Furthermore, maximum emission current density of ∼ 825 μA cm−2 was extracted from the MXene nanosheets emitter at an applied field of 3.60 V μm−1, in contrast to ∼71 μA cm−2 drawn at 7.31 V μm−1 from the pristine MAX emitter. The MXene nanosheets emitter exhibited good emission current stabilities at pre-set values ∼ 10 and 100 μA over 3 h duration. Work function values of the MAX and MXene nanosheets emitters were measured using a retarding field analyzer, and found to be 4.4 and 3.6 eV, respectively. Extensive ab-initio simulations have been performed to provide structural and electronic properties, as well as for estimating the work function of Ti3C2 layered material. The estimated electronic density of states revealed its metallic character. The improved FEE performance exhibited by the 2D layered Ti3C2Tx (MXene) nanosheets emitter is attributed to its unique morphology characterized by high aspect ratio, metallic electronic properties and relatively lower work function.
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二维层状 Ti3C2Tx MXene 纳米片的合成、物理化学表征、DFT 模拟和场电子特性
通过使用氢氟酸(HF)在室温下以不同的蚀刻持续时间从 Ti3AlC2(MAX 相)中化学蚀刻出 Al,成功制备出了 MXenes 家族成员之一 Ti3C2Tx 的纳米结构。使用 XRD、FESEM、TEM、拉曼和 X 射线光电子能谱进行了相位、形态、结构和化学分析。合成的 Ti3C2Tx(MXene)相的表面形态特征为层状片状结构。在 1 × 10-8 毫巴的基压下,对场电子发射(FEE)行为进行了研究。原始的 Ti3AlC2(MAX)和 Ti3C2Tx(MXene)纳米片发射器的导通电场值(定义为电流密度 ∼ 1 μA cm-2)分别为 4.18 和 1.67 V μm-1。此外,在 3.60 V μm-1 的外加电场下,MXene 纳米片发射极的最大发射电流密度为 825 μA cm-2,而原始 MAX 发射极在 7.31 V μm-1 的外加电场下的最大发射电流密度为 71 μA cm-2。MXene 纳米片发射器在持续 3 小时的预设值 ∼ 10 μA 和 100 μA 下显示出良好的发射电流稳定性。使用阻滞场分析仪测量了 MAX 和 MXene 纳米片发射器的功函数值,发现分别为 4.4 和 3.6 eV。为了提供结构和电子特性以及估算 Ti3C2 层状材料的功函数,我们进行了大量的模拟。估计的电子态密度显示了其金属特性。二维层状 Ti3C2Tx(MXene)纳米片发射器的 FEE 性能之所以得到改善,是因为其独特的形态具有高纵横比、金属电子特性和相对较低的功函数。
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