Exploring the suppression methods of helium-induced damages in tungsten by investigating the interaction between beryllium and helium

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-07-26 DOI:10.1088/1741-4326/ad67f1
Hong-Bo Zhou, Jin-Liang Li, Chaoxiang Lin, Ya-Xin Zhai, Zhangcan Yang, Yu-Hao Li, Yudi Niu, Huilei Ma, Guang-Hong Lu
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Abstract

Helium (He)-induced damages are sensitive concerns for the performance of tungsten plasma facing materials (W-PFMs). Recent experiments have revealed that trace impurities in He plasma can effectively prevent the formation of He bubbles and fuzz on W surfaces. To explore its plausibility and underlying mechanism, we performed a multiscale computational study that combines density functional theory calculations and object kinetic Monte Carlo simulations to investigate the effects of a small quantity of beryllium (Be) on the evolution of He bubbles. It is found that there is strong attractive interaction between He and Be, which can be attributed to the decrease of electron density and the lattice distortion induced by embedded Be atom. Therefore, the co-implantation of Be continuously introduces trapping centers for He. Due to low implantation depth and high migration energy of Be, the Be atoms are located close to the surface, leading to the trapping of the majority of He within the near-surface region and the development of a shielding layer for He permeation. The presence of Be facilitates the dispersion of the trapped He, skewing the He clusters into smaller size. More importantly, the Be trapping centers bring the He clusters closer to the surface, significantly increasing the probability of bubble bursting and the release of He back to the vacuum. These ultimately leads to a lower retention of He in the case of He+Be co-irradiation, compared with the case of He-only irradiation. Consequently, our findings elucidate the suppressive effect of a low flux of Be atoms on the growth of He bubbles, highlighting the need to focus on the synergetic effects between plasma species.
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通过研究铍和氦之间的相互作用探索钨中氦诱发损伤的抑制方法
氦(He)引起的损坏是钨等离子体表面材料(W-PFMs)性能的敏感问题。最近的实验发现,氦等离子体中的痕量杂质能有效防止氦气泡和绒毛在钨表面的形成。为了探索其合理性和内在机理,我们进行了一项多尺度计算研究,结合密度泛函理论计算和物体动力学蒙特卡洛模拟,研究了少量铍(Be)对 He 气泡演化的影响。研究发现,He 和 Be 之间存在很强的吸引力相互作用,这可归因于嵌入的 Be 原子引起的电子密度降低和晶格畸变。因此,Be 的共植入不断为 He 引入捕集中心。由于 Be 的植入深度低、迁移能量高,Be 原子靠近表面,导致大部分 He 被捕获在近表面区域,并形成了 He 渗透的屏蔽层。Be 的存在有利于被捕获 He 的分散,使 He 簇的尺寸变小。更重要的是,Be 捕集中心使 He 簇更接近表面,大大增加了气泡破裂和 He 释放回真空的几率。这些最终导致在 He+Be 协同辐照的情况下,He 的保留率低于只辐照 He 的情况。因此,我们的研究结果阐明了低通量 Be 原子对 He 气泡生长的抑制作用,突出了关注等离子体物种之间协同效应的必要性。
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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