The Nanostructure Based SnS Chalcogenide Semiconductor: A Detailed Investigation of Physical and Electrical Properties

IF 1.4 4区工程技术 Q3 ENGINEERING, CHEMICAL Periodica Polytechnica Chemical Engineering Pub Date : 2024-07-25 DOI:10.3311/ppch.36830

M. Benhaliliba, Abbas Ayeshamariam, Y. Ocak

{"title":"The Nanostructure Based SnS Chalcogenide Semiconductor: A Detailed Investigation of Physical and Electrical Properties","authors":"M. Benhaliliba, Abbas Ayeshamariam, Y. Ocak","doi":"10.3311/ppch.36830","DOIUrl":null,"url":null,"abstract":"In this research, we fabricate SnS films using a low-cost spray pyrolysis technique. Several parameters such as grain size, textural coefficient, Sn concentration, root mean square (RMS), optical band gap, Urbach and dispersion energy are determined by the mean of X-ray diffraction pattern, UV-Vis measurements, surface morphology observation by scanning electron microscopy (SEM)-energy dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), selective area electron diffraction (SAED) and atomic force microscopy (AFM). Furthermore, SnS thin films exhibit a polycrystalline structure having a low grain size of 6.1 nm along principal (111) orientation. The optical band gap is around 1.9 eV and Urbach energy is of 740 meV. The dielectric parameters of chalcogenide SnS thin film are varying with photon energy within ultraviolet-visible-infrared (Uv-Vis-IR) bands. Besides, the single oscillator E0 and Ed energies are found to be 2.03 and 3.28 eV, respectively, using the Wemple and DiDomenico (WDD) model.Electrical measurements of SnS thin films deposited onto Indium Tin Oxide (ITO) substrate are accomplished and current-voltage (I–V) characteristics of SnO2 / SnS/ITO, are shaped in dark and room temperature conditions. Photovoltaic parameters like open circuit voltage (Voc ), short circuit current (Isc ), fill factor (FF) and power conversion efficiency (η) values are determined and SnO2 / SnS/ITO junction records the highest values.","PeriodicalId":19922,"journal":{"name":"Periodica Polytechnica Chemical Engineering","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Periodica Polytechnica Chemical Engineering","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.3311/ppch.36830","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, CHEMICAL","Score":null,"Total":0}

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Abstract

In this research, we fabricate SnS films using a low-cost spray pyrolysis technique. Several parameters such as grain size, textural coefficient, Sn concentration, root mean square (RMS), optical band gap, Urbach and dispersion energy are determined by the mean of X-ray diffraction pattern, UV-Vis measurements, surface morphology observation by scanning electron microscopy (SEM)-energy dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), selective area electron diffraction (SAED) and atomic force microscopy (AFM). Furthermore, SnS thin films exhibit a polycrystalline structure having a low grain size of 6.1 nm along principal (111) orientation. The optical band gap is around 1.9 eV and Urbach energy is of 740 meV. The dielectric parameters of chalcogenide SnS thin film are varying with photon energy within ultraviolet-visible-infrared (Uv-Vis-IR) bands. Besides, the single oscillator E0 and Ed energies are found to be 2.03 and 3.28 eV, respectively, using the Wemple and DiDomenico (WDD) model.Electrical measurements of SnS thin films deposited onto Indium Tin Oxide (ITO) substrate are accomplished and current-voltage (I–V) characteristics of SnO2 / SnS/ITO, are shaped in dark and room temperature conditions. Photovoltaic parameters like open circuit voltage (Voc ), short circuit current (Isc ), fill factor (FF) and power conversion efficiency (η) values are determined and SnO2 / SnS/ITO junction records the highest values.

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基于纳米结构的SnS Chalcogenide半导体：物理和电气特性的详细研究

在这项研究中，我们采用低成本喷雾热解技术制造了 SnS 薄膜。通过 X 射线衍射图样、紫外可见光测量、扫描电子显微镜（SEM）-能量色散 X 射线光谱（EDX）表面形貌观察、透射电子显微镜（TEM）、选择性区域电子衍射（SAED）和原子力显微镜（AFM），确定了晶粒尺寸、纹理系数、Sn 浓度、均方根（RMS）、光带隙、Urbach 和色散能等参数。此外，SnS 薄膜呈现多晶结构，沿主（111）取向的晶粒尺寸较小，仅为 6.1 纳米。光带隙约为 1.9 eV，厄巴赫能为 740 meV。在紫外-可见-红外（Uv-Vis-IR）波段内，掺杂SnS薄膜的介电参数随光子能量的变化而变化。此外，利用 Wemple 和 DiDomenico（WDD）模型，发现单振子 E0 和 Ed 能量分别为 2.03 和 3.28 eV。对沉积在氧化铟锡（ITO）衬底上的 SnS 薄膜进行了电学测量，并在黑暗和室温条件下测定了 SnO2 / SnS/ITO 的电流电压（I-V）特性。确定了开路电压 (Voc)、短路电流 (Isc)、填充因子 (FF) 和功率转换效率 (η)等光伏参数值，其中二氧化硒/氧化铟锡/氧化锡结的数值最高。

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来源期刊

Periodica Polytechnica Chemical Engineering ENGINEERING, CHEMICAL-

CiteScore

3.10

自引率

7.70%

发文量

审稿时长

>12 weeks

期刊介绍： The main scope of the journal is to publish original research articles in the wide field of chemical engineering including environmental and bioengineering.