{"title":"Compact modeling of short-channel effects in back-gated 2D Negative Capacitance (NC) FETs","authors":"Chunsheng Jiang, Qing Lu, Liyang Pan, Quanfu Li, Hui-Ling Peng, Zhigang Zhang, Shuxiang Song, Jun Xu","doi":"10.1088/1361-6463/ad6611","DOIUrl":null,"url":null,"abstract":"\n The negative capacitance field-effect transistor with 2D channel material (2D NC-FET) holds significant promise for low-power applications owing to its remarkable resilience against short-channel effects (SCEs) and favorable noise characteristics. In this study, we establish a compact current-voltage (I-V) model for short-channel back-gated 2D NC-FETs with metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure by self-consistently solving the two-dimensional Poisson, drift-diffusion and Landau-Khalatnikov equations. The proposed model is valid and continuous throughout the entire operating regime, including the fully-depleted region, partly-depleted region, and accumulation region. Furthermore, we derive analytical equations for the threshold voltage (V_TH) and subthreshold swing (SS) of back-gated 2D NC-FETs based on the developed I-V model. Lastly, we elucidate the influence mechanisms of various device parameters and voltage bias on the subthreshold characteristics of short-channel back-gated 2D NC-FETs using the proposed I-V model in conjunction with analytical expressions of V_TH and SS. Our findings reveal that back-gated 2D NC-FETs shows unconventional degradation behavior in V_TH and SS, resulting from the competition between traditional short-channel effects (SCEs) and novel negative capacitance (NC) effects.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics D: Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1361-6463/ad6611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The negative capacitance field-effect transistor with 2D channel material (2D NC-FET) holds significant promise for low-power applications owing to its remarkable resilience against short-channel effects (SCEs) and favorable noise characteristics. In this study, we establish a compact current-voltage (I-V) model for short-channel back-gated 2D NC-FETs with metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure by self-consistently solving the two-dimensional Poisson, drift-diffusion and Landau-Khalatnikov equations. The proposed model is valid and continuous throughout the entire operating regime, including the fully-depleted region, partly-depleted region, and accumulation region. Furthermore, we derive analytical equations for the threshold voltage (V_TH) and subthreshold swing (SS) of back-gated 2D NC-FETs based on the developed I-V model. Lastly, we elucidate the influence mechanisms of various device parameters and voltage bias on the subthreshold characteristics of short-channel back-gated 2D NC-FETs using the proposed I-V model in conjunction with analytical expressions of V_TH and SS. Our findings reveal that back-gated 2D NC-FETs shows unconventional degradation behavior in V_TH and SS, resulting from the competition between traditional short-channel effects (SCEs) and novel negative capacitance (NC) effects.