4H-SiC 64-pixels CMOS image sensors with 3T/4T-APS arrays

Abstract

For radiation-hardened CMOS image sensor (CIS), 4H-SiC 64-pixel array CMOS image sensors were developed, and the real time imaging with an operation frequency of 30 Hz was demonstrated. Two types of pixel arrays with a 3-transistor active pixel sensor (3T-APS) and a 4-transistor active pixel sensor (4T-APS) were fabricated with SiC MOSFETs, UV photodiodes and 3-layered Al interconnections. The SiC pixel arrays were combined with peripheral circuits and optical lens, and then SiC 64-pixels CMOS image sensors with 3T/4T-APS arrays were developed.