Continuous wave operation of broad area and ridge waveguide laser diodes at 626 nm

Abstract

The authors present continuous wave (CW) high-power broad area and ridge waveguide lasers with laser emission at 626 nm at room temperature. For this, the authors employ GaAs-based diode lasers in the AlGaInP system for laser emission at 626 nm at room temperature. The laser structure is grown on three-inch wafers by metal organic vapour phase epitaxy. Broad area and ridge waveguide lasers are fabricated. Pulsed broad area laser characterisation on bar level shows laser operation at 20 C heat sink temperature. The authors measured peak lasing wavelengths as short as 625 nm and total maximum output power of both facets up to 1.4 W at an injection current of 2 A. Both, broad area and ridge waveguide lasers show laser operation and CW excitation at room temperature. The ridge waveguide lasers emit output powers of over 90 mW at 626 nm at a maximum injection current of 200 mA with a nearly diffraction-limited beam profile.