Kazuki Tomigahara, Masahiro Hara, M. Nozaki, Takuma Kobayashi, Heiji Watanabe
{"title":"Impacts of post-deposition annealing on hole trap generation at SiO2/p-type GaN MOS interfaces","authors":"Kazuki Tomigahara, Masahiro Hara, M. Nozaki, Takuma Kobayashi, Heiji Watanabe","doi":"10.35848/1882-0786/ad65b3","DOIUrl":null,"url":null,"abstract":"\n In this study, impacts of post-deposition annealing (PDA) on hole trap generation at SiO2/p-GaN MOS interfaces are investigated. While the surface potential is strongly pinned due to severe hole trapping after 800°C PDA, successful hole accumulation is observed when PDA is performed at 200°C. The density of interface hole traps causing surface potential pinning, extracted from the hump in capacitance-voltage curves, is about 1012 cm−2 with 200°C PDA, while over 1013 cm−2 when the PDA temperature exceeds 600°C, regardless of the annealing ambient. Consequently, the origin of these hole traps is speculated to be defects generated by thermal effects.","PeriodicalId":2,"journal":{"name":"ACS Applied Bio Materials","volume":" 11","pages":""},"PeriodicalIF":4.7000,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Bio Materials","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1882-0786/ad65b3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, BIOMATERIALS","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, impacts of post-deposition annealing (PDA) on hole trap generation at SiO2/p-GaN MOS interfaces are investigated. While the surface potential is strongly pinned due to severe hole trapping after 800°C PDA, successful hole accumulation is observed when PDA is performed at 200°C. The density of interface hole traps causing surface potential pinning, extracted from the hump in capacitance-voltage curves, is about 1012 cm−2 with 200°C PDA, while over 1013 cm−2 when the PDA temperature exceeds 600°C, regardless of the annealing ambient. Consequently, the origin of these hole traps is speculated to be defects generated by thermal effects.
期刊介绍:
ACS Applied Bio Materials is an interdisciplinary journal publishing original research covering all aspects of biomaterials and biointerfaces including and beyond the traditional biosensing, biomedical and therapeutic applications.
The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrates knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important bio applications. The journal is specifically interested in work that addresses the relationship between structure and function and assesses the stability and degradation of materials under relevant environmental and biological conditions.