Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells

Abstract

An approach to derive the below-bandgap absorption in GaSb/GaAs self-assembled quantum dot devices using room-temperature external quantum efficiency measurement results is presented. Devices with five layers of delta-doped quantum dots placed in the intrinsic, n- and p-regions of a GaAs solar cell are studied. The importance of incorporating an extended Urbach tail absorption in analyzing the absorption strength of quantum dots and the transition states is demonstrated. The theoretically integrated absorbance via quantum dot ground states is calculated as 1.04 × 1015 cm−1s−1, which is in reasonable agreement with the experimentally derived value 8.1 × 1015 cm−1s−1. The wetting layer and quantum dot absorption contributions are separated from the tail absorption and their transition energies are calculated. Using these transition energies and the GaAs energy gap of 1.42 eV, the heavy hole confinement energies for the quantum dots (320 meV) and for the wetting layer (120 meV) are estimated.