Preparation and Process Optimization of Silicon Monoxide Nanowires by Vacuum Silicothermic Reduction

Abstract

Silicon monoxide nanowires have become ubiquitous in twenty-first century technology due to their superior photoelectric properties, widely utilized in semiconductor manufacturing and emerging energy fields. While numerous studies have concentrated on tailoring material properties, scant attention has been paid to the impact of process parameters on the productivity of silicon monoxide during synthesis. Through response surface methodology, the effects of holding time, heating temperature, and Si/SiO₂ molar ratio on the volatilization ratio of silicon monoxide have been investigated. The optimization of silicon monoxide nanowire preparation via vacuum silicothermic reduction was aimed at achieving maximum efficiency. According to the established mathematical model, the volatilization ratio of silicon monoxide reaches 92.057% when the holding time is 126 min, the heating temperature is 1663 K, and the molar ratio is 1. A comprehensive analysis revealed that temperature is the most significant factor affecting silicon monoxide volatilization among the studied parameters. Furthermore, the reduction slag of the system was characterized and analyzed. The results indicate that vacuum conditions can lower the starting temperature of the silicothermic reduction, thereby promoting the volatilization of SiO(g).