Heterometallic Ti-Zr oxo nanocluster photoresists for advanced lithography

IF 6.8 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Science China Materials Pub Date : 2024-08-06 DOI:10.1007/s40843-024-3013-9

Yang Qiao (, ), Guangyue Shi (, ), Ou Zhang (, ), You Li (, ), Michaela Vockenhuber, Yasin Ekinci, Feng Luo (, ), Lei Zhang (, )

{"title":"Heterometallic Ti-Zr oxo nanocluster photoresists for advanced lithography","authors":"Yang Qiao \n (, ), Guangyue Shi \n (, ), Ou Zhang \n (, ), You Li \n (, ), Michaela Vockenhuber, Yasin Ekinci, Feng Luo \n (, ), Lei Zhang \n (, )","doi":"10.1007/s40843-024-3013-9","DOIUrl":null,"url":null,"abstract":"<div><p>Extreme ultraviolet lithography (EUVL) and electron beam lithography (EBL) are considered to be crucial lithography techniques utilized in the fabrication of nanoscale semiconductor devices. However, the industry currently faces a scarcity of EUV photoresists that meet the increasingly challenging standards in terms of resolution, sensitivity and roughness. Metal oxo nanoclusters have garnered significant interest in the field of EUV photoresist due to their relatively stronger absorption cross-section for extreme ultraviolet light and lower dimensions. In this study, we utilize a heterometallic nanocluster strategy by a combination of titanium and zirconium metals to investigate their solubility, assess the suitability of various developers, and evaluate their performance in electron-beam and EUVL, as well as study their etch resistance for pattern transfer. We demonstrate that R-4 is able to get a critical dimension (CD) of 25 nm at low doses under EBL, as well as 50 nm resolution at EUVL with a remarkable sensitivity of 19.7 mJ cm<sup>−2</sup>. This study offers an efficient heterometallic method for optimizing the lithographic performance of metal oxo nanocluster photoresists, which can benefit the development of commercially viable next-generation EUV photoresists.\n</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":773,"journal":{"name":"Science China Materials","volume":"67 10","pages":"3132 - 3141"},"PeriodicalIF":6.8000,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Materials","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s40843-024-3013-9","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

Extreme ultraviolet lithography (EUVL) and electron beam lithography (EBL) are considered to be crucial lithography techniques utilized in the fabrication of nanoscale semiconductor devices. However, the industry currently faces a scarcity of EUV photoresists that meet the increasingly challenging standards in terms of resolution, sensitivity and roughness. Metal oxo nanoclusters have garnered significant interest in the field of EUV photoresist due to their relatively stronger absorption cross-section for extreme ultraviolet light and lower dimensions. In this study, we utilize a heterometallic nanocluster strategy by a combination of titanium and zirconium metals to investigate their solubility, assess the suitability of various developers, and evaluate their performance in electron-beam and EUVL, as well as study their etch resistance for pattern transfer. We demonstrate that R-4 is able to get a critical dimension (CD) of 25 nm at low doses under EBL, as well as 50 nm resolution at EUVL with a remarkable sensitivity of 19.7 mJ cm⁻². This study offers an efficient heterometallic method for optimizing the lithographic performance of metal oxo nanocluster photoresists, which can benefit the development of commercially viable next-generation EUV photoresists.

Abstract Image

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

用于先进光刻技术的异金属钛锆氧化物纳米簇光刻胶

极紫外光刻（EUVL）和电子束光刻（EBL）被认为是制造纳米级半导体器件的关键光刻技术。然而，目前业界缺少能满足在分辨率、灵敏度和粗糙度方面日益具有挑战性的标准的 EUV 光刻胶。由于金属氧化物纳米团簇对极紫外光的吸收截面相对较强，而且尺寸较小，因此在 EUV 光刻胶领域引起了极大的兴趣。在本研究中，我们利用钛金属和锆金属相结合的异金属纳米簇策略，研究了它们的溶解性，评估了各种显影剂的适用性，评估了它们在电子束和极紫外光中的性能，并研究了它们在图案转移时的抗蚀刻性。我们证明，R-4 能够在电子束光下以低剂量获得 25 纳米的临界尺寸 (CD)，并能在超紫外光下获得 50 纳米的分辨率，灵敏度高达 19.7 mJ cm-2。这项研究为优化金属氧化物纳米簇光刻胶的光刻性能提供了一种高效的异金属方法，有利于开发具有商业价值的下一代超紫外光刻胶。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Science China Materials Materials Science-General Materials Science

CiteScore

11.40

自引率

7.40%

发文量

949

期刊介绍： Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.