Optoelectronic performance of MAPbI3:PCBM bulk heterojunction photodetectors

Abstract

Organometallic halide perovskites have shown significant promise for applications in optoelectronics and photovoltaics in recent years. This research looks into the performance of bulk heterojunction-based photodetectors (PDs) based on the active layer of a CH₃NH₃PbI₃:PCBM bulk heterojunction (BHJ). We assessed the impact of PCBM concentration in CH₃NH₃PbI₃:PCBM BHJ on the electrical performance of the PDs. We found that the BHJ PD with a 4% PCBM concentration had the strongest capability to reject noise, as demonstrated by its superior ratio of photocurrent to dark current. Moreover, the PD with a 4% PCBM concentration in the active layer outperforms pristine CH₃NH₃PbI₃-based PDs in terms of optoelectronic performance, showing greater responsivity and detectivity. The improved optoelectronic performance of BHJ PD is due to increased interfacial area, higher electron extraction and a decrease in traps and defects. The analysis of dark current–voltage curves reveals a significant reduction in charge recombination for BHJ devices, supporting the elimination of traps and defects by the inclusion of PCBM. The PD’s impedance study unveils that the incorporation of PCBM enhances charge transfer and effectively suppresses charge recombination, leading to enhanced optoelectronic performance.