Ultra Low Power Consumption Optoelectronic Logic Operation of CuO/BaTiO3 Heterojunction Photodetector with Tunable Internal Electric Field Based on Poling Effect
Junhyung Cho, Wangmyung Choi, Taehyun Park, Hocheon Yoo
{"title":"Ultra Low Power Consumption Optoelectronic Logic Operation of CuO/BaTiO3 Heterojunction Photodetector with Tunable Internal Electric Field Based on Poling Effect","authors":"Junhyung Cho, Wangmyung Choi, Taehyun Park, Hocheon Yoo","doi":"10.1002/admt.202400697","DOIUrl":null,"url":null,"abstract":"The study presents a novel self‐powered ultraviolet (UV) photodetector harnessing both polarization fields and photovoltaic effects, enabling the realization of ultra‐low power, reconfigurable optoelectronic logic gates. The approach is demonstrated on a CuO/BaTiO<jats:sub>3</jats:sub> heterojunction photodetector. The behavior of the photodetector is augmented by the poling effect, aligning the internal electric field of the BaTiO<jats:sub>3</jats:sub> through the application of a robust external electric field, thereby facilitating the implementation of optoelectronic logic gates. In the unpoled state, the “XOR” and “OR” logic gates operated at voltages of 750 and −500 µV, respectively. However, upon poling up state, the “XOR” logic gate exhibits reduced operation voltage, operating at 500 µV, while the “OR” logic gate implements clarity at −500 µV. In the unpoled state the “AND” logic gate does not operate; however, upon poling in the downward direction, it operated at −500 µV. The achievement demonstrates successful ultra‐low‐power logic operations, utilizing voltages in the hundreds of micron scale, under a 310 nm wavelength and a light intensity of 0.52 mW·cm<jats:sup>−2</jats:sup>. Furthermore, controllable polarization electric fields in BaTiO<jats:sub>3</jats:sub> enable the operation of “AND” logic gate in the unpoled state, presenting a promising avenue for future research in optoelectronic logic gate design.","PeriodicalId":7200,"journal":{"name":"Advanced Materials & Technologies","volume":"58 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials & Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/admt.202400697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The study presents a novel self‐powered ultraviolet (UV) photodetector harnessing both polarization fields and photovoltaic effects, enabling the realization of ultra‐low power, reconfigurable optoelectronic logic gates. The approach is demonstrated on a CuO/BaTiO3 heterojunction photodetector. The behavior of the photodetector is augmented by the poling effect, aligning the internal electric field of the BaTiO3 through the application of a robust external electric field, thereby facilitating the implementation of optoelectronic logic gates. In the unpoled state, the “XOR” and “OR” logic gates operated at voltages of 750 and −500 µV, respectively. However, upon poling up state, the “XOR” logic gate exhibits reduced operation voltage, operating at 500 µV, while the “OR” logic gate implements clarity at −500 µV. In the unpoled state the “AND” logic gate does not operate; however, upon poling in the downward direction, it operated at −500 µV. The achievement demonstrates successful ultra‐low‐power logic operations, utilizing voltages in the hundreds of micron scale, under a 310 nm wavelength and a light intensity of 0.52 mW·cm−2. Furthermore, controllable polarization electric fields in BaTiO3 enable the operation of “AND” logic gate in the unpoled state, presenting a promising avenue for future research in optoelectronic logic gate design.