Synthesis of tantalum oxide thin films using RF magnetron sputtering for RRAM application

IF 1.3 4区 物理与天体物理 Q3 NUCLEAR SCIENCE & TECHNOLOGY Radiation Effects and Defects in Solids Pub Date : 2024-08-09 DOI:10.1080/10420150.2024.2378422
Disha Yadav, R. Sai Prasad Goud, S.V.S. Nageswara Rao, Jaspreet Singh, Amit Krishna Dwivedi, Devesh Kumar Avasthi
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Abstract

Resistive Random Access Memory (RRAM) is a prominent contender in the realm of emerging non-volatile memory technologies owing to its numerous advantages like simple structure, low power usage, hig...
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利用射频磁控溅射技术合成用于 RRAM 的氧化钽薄膜
电阻式随机存取存储器(RRAM)是新兴非易失性存储器技术领域的主要竞争者,因为它具有结构简单、功耗低、性能高、存储容量大等众多优点。
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来源期刊
CiteScore
1.60
自引率
20.00%
发文量
107
审稿时长
4 months
期刊介绍: The Journal covers a wide range of topics under radiation and plasma sciences. The range of contributions encompasses: radiation physics; radiochemistry, radiobiology and physical effects of medical irradiation, including research on radiative cell degeneration; optical, electrical and mechanical effects of radiation, and their secondary effects such as diffusion and particle emission from surfaces; plasma techniques and plasma phenomena. On plasma science the Journal covers all areas of fusion, space and low temperature plasmas.
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