Turning a Kv channel into hot and cold receptor by perturbing its electromechanical coupling.

Bernardo I Pinto-Anwandter, Carlos A Z Bassetto, Ramon Latorre, Francisco Bezanilla
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Abstract

Voltage-dependent potassium channels (Kv) are extremely sensitive to membrane voltage and play a crucial role in membrane repolarization during action potentials. Kv channels undergo voltage-dependent transitions between closed states before opening. Despite all we have learned using electrophysiological methods and structural studies, we still lack a detailed picture of the energetics of the activation process. We show here that even a single mutation can drastically modify the temperature response of the Shaker Kv channel. Using rapid cell membrane temperature steps (Tsteps), we explored the effects of temperature on the ILT mutant (V369I, I372L, and S376T) and the I384N mutant. The ILT mutant produces a significant separation between the transitions of the voltage sensor domain (VSD) activation and the I384N uncouples its movement from the opening of the domain (PD). ILT and I384N respond to temperature in drastically different ways. In ILT, temperature facilitates the opening of the channel akin to a ″hot″ receptor, reflecting the temperature dependence of the voltage sensor ′s last transition and facilitating VSD to PD coupling (electromechanical coupling). In I384N, temperature stabilizes the channel closed configuration analogous to a ″cold″ receptor. Since I384N drastically uncouples the VSD from the pore opening, we reveal the intrinsic temperature dependence of the PD itself. Here, we propose that the electromechanical coupling has either a ″loose″ or ″tight″ conformation. In the loose conformation, the movement of the VSD is necessary but not sufficient to efficiently propagate the electromechanical energy to the S6 gate. In the tight conformation the VSD activation is more effectively translated into the opening of the PD. This conformational switch can be tuned by temperature and modifications of the S4 and S4-S5 linker. Our results show that we can modulate the temperature dependence of Kv channels by affecting its electromechanical coupling.
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通过扰动 Kv 通道的机电耦合将其变成冷热受体
电压依赖性钾通道(Kv)对膜电压极为敏感,在动作电位过程中对膜的再极化起着至关重要的作用。Kv 通道在打开之前会在闭合状态之间发生电压依赖性转换。尽管我们已经通过电生理方法和结构研究了解到了一切,但我们仍然缺乏对激活过程能量学的详细描述。我们在此表明,即使是一个突变也能极大地改变振动器 Kv 通道的温度响应。利用快速细胞膜温度步长(Tsteps),我们探索了温度对 ILT 突变体(V369I、I372L 和 S376T)和 I384N 突变体的影响。ILT 突变体在电压传感器结构域(VSD)激活的转换之间产生了明显的分离,而 I384N 则使其运动与结构域的打开(PD)脱钩。ILT 和 I384N 对温度的反应截然不同。在 ILT 中,温度促进通道的打开,类似于″热″受体,反映了电压传感器最后转换的温度依赖性,并促进 VSD 与 PD 的耦合(机电耦合)。在 I384N 中,温度稳定了通道的闭合构型,类似于″冷″受体。由于 I384N 大大解除了 VSD 与孔开放的耦合,我们揭示了 PD 本身的内在温度依赖性。在这里,我们提出机电耦合有 "松 "或 "紧 "两种构象。在松弛构象中,VSD 的运动是必要的,但不足以将机电能量有效传播到 S6 栅极。在紧构象中,VSD 的激活能更有效地转化为 PD 的打开。这种构象转换可以通过温度以及对 S4 和 S4-S5 连接器的修改来调节。我们的研究结果表明,我们可以通过影响 Kv 通道的机电耦合来调节其温度依赖性。
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