Topological Quantum Materials with Kagome Lattice

IF 14 Q1 CHEMISTRY, MULTIDISCIPLINARY Accounts of materials research Pub Date : 2024-06-20 DOI:10.1021/accountsmr.3c0029110.1021/accountsmr.3c00291
Qi Wang, Hechang Lei*, Yanpeng Qi* and Claudia Felser, 
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Abstract

Recently, various topological states have undergone a spurt of progress in the field of condensed matter physics. An emerging category of topological quantum materials with kagome lattice has drawn enormous attention. A two-dimensional kagome lattice composed of corner-sharing triangles is a fascinating structural system, which could not only lead to geometrically frustrated magnetism but also have a nontrivial topological electronic structure hosting Dirac points, van Hove singularities, and flat bands. Due to the existence of multiple spin, charge, and orbit degrees of freedom accompanied by the unique structure of the kagome lattice, the interplay between frustrated magnetism, nontrivial topology, and correlation effects is considered to result in abundant quantum states and provides a platform for researching the emergent electronic orders and their correlations.

In this Account, we will give an overview of our research progress on novel quantum properties in topological quantum materials with kagome lattice. Here, there are mainly two categories of kagome materials: magnetic kagome materials and nonmagnetic ones. On one hand, magnetic kagome materials mainly focus on the 3d transition-metal-based kagome systems, including Fe3Sn2, Co3Sn2S2, YMn6Sn6, FeSn, and CoSn. The interplay between magnetism and topological bands manifests vital influence on the electronic response. For example, the existence of massive Dirac or Weyl fermions near the Fermi level significantly enhances the magnitude of Berry curvature in momentum space, leading to a large intrinsic anomalous Hall effect. In addition, the peculiar frustrated structure of kagome materials enables them to host a topologically protected skyrmion lattice or noncoplanar spin texture, yielding a topological Hall effect that arises from the real-space Berry phase. On the other hand, nonmagnetic kagome materials in the absence of long-range magnetic order include CsV3Sb5 with the coexistence of superconductivity, charge density wave state, and band topology and van der Waals semiconductor Pd3P2S8. For these two kagome materials, the tunability of electric response in terms of high pressure or carrier doping helps to reveal the interplay between electronic correlation effects and band topology and discover the novel emergent quantum phenomena in kagome materials.

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具有鹿目晶格的拓扑量子材料
最近,各种拓扑态在凝聚态物理领域取得了突飞猛进的发展。其中,一类新兴的具有神目晶格的拓扑量子材料引起了人们的极大关注。由分角三角形组成的二维卡戈米晶格是一个迷人的结构体系,它不仅可以产生几何失谐磁性,还具有非难拓扑电子结构,包含狄拉克点、范霍夫奇点和平坦带。由于存在多个自旋、电荷和轨道自由度以及独特的可果美晶格结构,挫折磁性、非琐碎拓扑和相关效应之间的相互作用被认为会产生丰富的量子态,并为研究新兴电子阶次及其相关性提供了一个平台。这里的卡戈米材料主要分为两类:磁性卡戈米材料和非磁性卡戈米材料。一方面,磁性 kagome 材料主要集中在 3d 过渡金属基 kagome 体系,包括 Fe3Sn2、Co3Sn2S2、YMn6Sn6、FeSn 和 CoSn。磁性和拓扑带之间的相互作用对电子响应有着至关重要的影响。例如,费米水平附近大质量狄拉克费米子或韦尔费米子的存在会显著增强动量空间中贝里曲率的大小,从而导致巨大的内在反常霍尔效应。此外,卡戈米材料奇特的挫折结构使它们能够承载拓扑保护的天元晶格或非共面自旋纹理,产生源于真实空间贝里相的拓扑霍尔效应。另一方面,无长程磁序的非磁性 kagome 材料包括超导性、电荷密度波态和带拓扑共存的 CsV3Sb5 以及范德华半导体 Pd3P2S8。对于这两种卡戈米材料,高压或载流子掺杂对电响应的可调谐性有助于揭示电子关联效应与能带拓扑之间的相互作用,并发现卡戈米材料中新出现的量子现象。
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