Study of conductance in graphene nanochannels for symmetric and asymmetric junction configurations

Simran Patra, Ajit Kumar Sahu, Madhusudan Mishra, Raghunandan Swain, Narayan Sahoo
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Abstract

The transport properties of graphene nanochannels have been studied for symmetric and asymmetric junction configurations using an open-source Python-based tool “Kwant”. In the design process, the arrangement of a narrow channel connected between the two wide graphene nanoribbons appeals to shapes like U and H. Both zigzag (ZNR) and armchair graphene nanoribbons (AGNR) are considered as case studies, and the effect of side junctions on the conductance and density of states are analysed as a function of nanochannel width (WC). It is observed that, in all the shapes as WC increases the conductance enhances around the zero Fermi energy. Unity conductance is achieved with WC = 8, 12, and 16 atoms for unmodulated ZNR channels of length 60 Å. However, for U- and H-shapes with narrow channels (WC = 8 or 12 atoms), the scattering effect is prominent at the junction leading to not only in reduction but also fluctuation of the conductance. A wider channel (WC = 16 atoms), reduces the scattering effect and leads to unity conductance. On the other hand, for the AGNR-based U-shaped structure although the channels with WC = 23, 29, and 35 atoms satisfy metallic conditions (WC = 3p + 2), the conductance is still zero. However, for the H-shaped structure, the channel with WC = 35 atoms possess unity conductance. Moreover, studying the effect of asymmetry in the junction alignment of the channel in the H-shape, the conductance fluctuates for the AGNR case but remains unchanged for the ZNR case.

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对称和非对称结配置的石墨烯纳米通道电导研究
我们使用基于 Python 的开源工具 "Kwant "研究了对称和非对称交界配置的石墨烯纳米通道的传输特性。在设计过程中,连接在两条宽石墨烯纳米带之间的窄通道的布置会产生 U 型和 H 型等形状。我们将人字形(ZNR)和扶手椅形石墨烯纳米带(AGNR)作为案例进行研究,并分析了侧结对电导和状态密度的影响与纳米通道宽度(WC)的函数关系。研究发现,在所有形状中,随着 WC 的增加,费米零能附近的电导都会增强。然而,对于具有窄通道(WC = 8 或 12 个原子)的 U 型和 H 型,结点处的散射效应非常明显,不仅导致电导降低,而且还导致电导波动。较宽的通道(WC = 16 个原子)可减少散射效应,从而使电导率保持不变。另一方面,对于基于 AGNR 的 U 型结构,虽然 WC = 23、29 和 35 个原子的通道满足金属条件(WC = 3p + 2),但电导仍然为零。然而,对于 H 型结构,含有 WC = 35 个原子的沟道却具有统一的电导率。此外,在研究 H 型沟道的结排列不对称的影响时,AGNR 情况下的电导会波动,而 ZNR 情况下的电导则保持不变。
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