The effect of quantum confinement and the role of electron-phonon interaction on the band gap shrinkage of some II-VI semiconductors

IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Solid State Communications Pub Date : 2024-08-15 DOI:10.1016/j.ssc.2024.115657
Akansha Thakur, Niladri Sarkar
{"title":"The effect of quantum confinement and the role of electron-phonon interaction on the band gap shrinkage of some II-VI semiconductors","authors":"Akansha Thakur,&nbsp;Niladri Sarkar","doi":"10.1016/j.ssc.2024.115657","DOIUrl":null,"url":null,"abstract":"<div><p>The role of electron-phonon interaction in band gap shrinkage for some II-VI bulk and low-dimensional semiconductors is investigated in this work. The variation of the energy band gap is studied as a function of temperature using Varshni's, Vina's, and Passler's relations. It is observed that the change in the energy band gap is affected due to the quantum confinement as the dimensionality of these semiconductors is decreased.</p></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"392 ","pages":"Article 115657"},"PeriodicalIF":2.1000,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Communications","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038109824002345","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
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Abstract

The role of electron-phonon interaction in band gap shrinkage for some II-VI bulk and low-dimensional semiconductors is investigated in this work. The variation of the energy band gap is studied as a function of temperature using Varshni's, Vina's, and Passler's relations. It is observed that the change in the energy band gap is affected due to the quantum confinement as the dimensionality of these semiconductors is decreased.

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量子约束效应和电子-声子相互作用对某些 II-VI 半导体带隙收缩的作用
本文研究了电子-声子相互作用在某些 II-VI 体半导体和低维半导体能带隙收缩中的作用。利用 Varshni、Vina 和 Passler 关系研究了能带隙随温度的变化。研究发现,当这些半导体的维数降低时,能带隙的变化会受到量子束缚的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Solid State Communications
Solid State Communications 物理-物理:凝聚态物理
CiteScore
3.40
自引率
4.80%
发文量
287
审稿时长
51 days
期刊介绍: Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged. A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions. The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.
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