Doped holes and/or electrons induced superconductivity domes explained with the free volume concept

IF 3.4 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY International Journal of Mechanical and Materials Engineering Pub Date : 2024-08-21 DOI:10.1186/s40712-024-00159-7
Tian Hao
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引用次数: 0

Abstract

The conductivity equation developed in our previous work without any restrictions to specific materials is employed to explore how superconductivity transition temperature \(T_{c}\) changes with the doped hole or electron concentrations based on the free volume concept. The predicted relationship is used to fit experimental data available in the literature and a good agreement with observations is achieved. Our findings may provide an alternative explanation for doping-induced domes and/or double domes with a-dip phenomena observed among many superconductors.

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用自由体积概念解释掺杂空穴和/或电子诱导的超导穹顶
基于自由体积概念,我们采用了之前工作中开发的、不受特定材料限制的传导方程来探索超导转变温度\(T_{c}\)是如何随掺杂空穴或电子浓度的变化而变化的。所预测的关系被用来拟合文献中的实验数据,结果与观测数据十分吻合。我们的发现可以为在许多超导体中观察到的掺杂诱导圆顶和/或双圆顶a-dip现象提供另一种解释。
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来源期刊
CiteScore
8.60
自引率
0.00%
发文量
1
审稿时长
13 weeks
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