Ernesto Soto, Shannon J. Lee, Andrew P. Porter, Gayatri Viswanathan, Georgiy Akopov, Nethmi Hewage, Kui Wu, Victor Trinquet, Guillaume Brunin, Geoffroy Hautier, Gian-Marco Rignanese, Aaron J. Rossini, Kirill Kovnir
{"title":"FeSi4P4 and CoSi3P3: Hidden Gems of Ternary Tetrel Pnictides with Outstanding Nonlinear Optical Properties","authors":"Ernesto Soto, Shannon J. Lee, Andrew P. Porter, Gayatri Viswanathan, Georgiy Akopov, Nethmi Hewage, Kui Wu, Victor Trinquet, Guillaume Brunin, Geoffroy Hautier, Gian-Marco Rignanese, Aaron J. Rossini, Kirill Kovnir","doi":"10.1021/acs.chemmater.4c01688","DOIUrl":null,"url":null,"abstract":"Metal silicon phosphides have shown promise as nonlinear optical materials. To be practically useful and cheap, earth-abundant 3<i>d</i> transition metals are preferred over their scarcer and more expensive 4d and 5d counterparts. We developed a synthetic method to produce polycrystalline bulk powders and millimeter-sized single crystals of ternary compounds FeSi<sub>4</sub>P<sub>4</sub> and CoSi<sub>3</sub>P<sub>3</sub>. Both studied compounds have noncentrosymmetric and chiral crystal structures with ordered Si/P arrangements as was confirmed by single-crystal X-ray diffraction and solid-state NMR. Despite the presence of the transition metal, FeSi<sub>4</sub>P<sub>4</sub> and CoSi<sub>3</sub>P<sub>3</sub> are semiconductors with direct band gaps of 1.3 and 1.6 eV, respectively, indicating low-spin d<sup>6</sup> electronic configuration for octahedral Fe<sup>2+</sup> and Co<sup>3+</sup>. Relative to reported sulfide materials, FeSi<sub>4</sub>P<sub>4</sub> and CoSi<sub>3</sub>P<sub>3</sub> small band gap semiconductors demonstrate an outstanding combination of second-harmonic generation (SHG) activity and laser damage threshold (LDT). Both studied materials are phase-matchable with a 2.09 μm laser and not only exhibit 2.5–3.0 times stronger SHG signal than that of the state-of-the-art AgGaS<sub>2</sub> standard but also demonstrate an LDT response of 2.3–2.5 times higher than that of AgGaS<sub>2</sub> (at 1.09 μm laser with a pulse width of 10 ns)─which is unprecedented for small band gap semiconductors.","PeriodicalId":7,"journal":{"name":"ACS Applied Polymer Materials","volume":null,"pages":null},"PeriodicalIF":4.4000,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Polymer Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acs.chemmater.4c01688","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Metal silicon phosphides have shown promise as nonlinear optical materials. To be practically useful and cheap, earth-abundant 3d transition metals are preferred over their scarcer and more expensive 4d and 5d counterparts. We developed a synthetic method to produce polycrystalline bulk powders and millimeter-sized single crystals of ternary compounds FeSi4P4 and CoSi3P3. Both studied compounds have noncentrosymmetric and chiral crystal structures with ordered Si/P arrangements as was confirmed by single-crystal X-ray diffraction and solid-state NMR. Despite the presence of the transition metal, FeSi4P4 and CoSi3P3 are semiconductors with direct band gaps of 1.3 and 1.6 eV, respectively, indicating low-spin d6 electronic configuration for octahedral Fe2+ and Co3+. Relative to reported sulfide materials, FeSi4P4 and CoSi3P3 small band gap semiconductors demonstrate an outstanding combination of second-harmonic generation (SHG) activity and laser damage threshold (LDT). Both studied materials are phase-matchable with a 2.09 μm laser and not only exhibit 2.5–3.0 times stronger SHG signal than that of the state-of-the-art AgGaS2 standard but also demonstrate an LDT response of 2.3–2.5 times higher than that of AgGaS2 (at 1.09 μm laser with a pulse width of 10 ns)─which is unprecedented for small band gap semiconductors.
期刊介绍:
ACS Applied Polymer Materials is an interdisciplinary journal publishing original research covering all aspects of engineering, chemistry, physics, and biology relevant to applications of polymers.
The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrates fundamental knowledge in the areas of materials, engineering, physics, bioscience, polymer science and chemistry into important polymer applications. The journal is specifically interested in work that addresses relationships among structure, processing, morphology, chemistry, properties, and function as well as work that provide insights into mechanisms critical to the performance of the polymer for applications.