Analysis and Mitigation on Mismatch-Induced Spurious Gate–Source Voltages in SiC Bridge-Leg Power Modules With Kelvin Sources

IF 4.9 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Emerging and Selected Topics in Power Electronics Pub Date : 2024-09-09 DOI:10.1109/JESTPE.2024.3456137
Cheng Zhao;Laili Wang;Junhui Yang;Shijie Wu;Huaiqing Zhang
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Abstract

In bridge-leg configurations, spurious gate-source voltages (crosstalk voltages) can falsely trigger one switch to turn on at the complementary switch’s turn-on interval. Previous works about crosstalk voltages always regard each switch as a single chip. However, in high-current silicon carbide (SiC) power modules, each switch consists of multiple paralleled SiC MOSFETs (PSMs). The distinction between a single SiC MOSFET and PSMs regarding crosstalk issues remains unclear. This article aims to investigate the mechanism of crosstalk voltages for PSMs by theoretical analysis and experiments. It has been discovered that unbalanced power-source voltages caused by power-net mismatches can generate additional differential-mode oscillated components in crosstalk voltages of PSMs, which are absent in single SiC MOSFET and cannot be effectively suppressed by active miller clamping methods (AMCs). Therefore, two methods are proposed to address crosstalk voltages resulting from asymmetric factors among PSMs. The first method involves integrating mini common-mode inductors (CMs) into drive nets of PSMs, while the second method suggests paralleling extra SiC Schottky diodes (SBDs) with PSMs. Specific principles underlying these proposed methods are discussed comprehensively, and their effectiveness is verified by applying them to a baseline power module.
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采用开尔文源的碳化硅桥脚功率模块中失配引起的栅源杂散电压的分析与缓解
在桥腿结构中,杂散的门源电压(串扰电压)可以在互补开关的导通间隔错误地触发一个开关导通。以往关于串扰电压的研究总是把每个开关看作一个单独的芯片。然而,在大电流碳化硅(SiC)功率模块中,每个开关由多个并联的SiC mosfet (psm)组成。关于串扰问题,单SiC MOSFET和psm之间的区别仍然不清楚。本文旨在通过理论分析和实验研究psm串扰电压的产生机理。研究发现,由电网不匹配引起的不平衡电源电压会在psm串扰电压中产生额外的差模振荡分量,而这些分量在单个SiC MOSFET中是不存在的,并且无法通过有源米勒箝位方法(AMCs)有效抑制。因此,提出了两种方法来解决由psm之间的不对称因素引起的串扰电压。第一种方法是将微型共模电感(cm)集成到psm的驱动网络中,而第二种方法建议将额外的SiC肖特基二极管(sbd)与psm并联。本文全面讨论了这些方法的具体原理,并通过将其应用于基准功率模块来验证其有效性。
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来源期刊
CiteScore
12.50
自引率
9.10%
发文量
547
审稿时长
3 months
期刊介绍: The aim of the journal is to enable the power electronics community to address the emerging and selected topics in power electronics in an agile fashion. It is a forum where multidisciplinary and discriminating technologies and applications are discussed by and for both practitioners and researchers on timely topics in power electronics from components to systems.
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