A Generalized Synthesis Technique for High-Order Ultrawideband Microwave Absorbers

IF 2.5 3区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electromagnetic Compatibility Pub Date : 2024-09-10 DOI:10.1109/TEMC.2024.3447076
Yun-Jie Zhu;Hanxuan Li;Wanping Zhang;Feng Huang;Bo Li;Lei Zhu
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Abstract

A generalized synthesis technique for a new class of high-order ultrawideband microwave absorbers is presented in this article. First, a generalized circuit model of high-order ultrawideband microwave absorber is proposed based on the principle of a multistage impedance matching network, whose frequency response can be synthesized with Chebyshev polynomials of the first class over a wide frequency range. Following the synthesis procedure, all circuit parameters for arbitrary fractional bandwidth and minimum return loss in the absorption band can be accurately calculated. Subsequently, physical structures are realized by means of stacked printed circuit board pieces etched with slotlines and embedded resistors. The physical parameters of the slotlines are extracted with high precision under periodic boundary conditions. The fourth- and fifth-order absorbers are then designed, fabricated, and measured with distinct design specifications. The measured results correspond well with the simulated ones. Additionally, both absorber designs demonstrate good angular stability even when exposed to the 50° oblique incidence. Therefore, the proposed generalized circuit model and synthesis method are evidently validated and can provide an efficient and accurate solution to design this kind of high-order ultrawideband microwave absorbers. Furthermore, it provides a broader absorption band while utilizing the minimal number of resistors, making it highly practical for a wide range of applications.
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高阶超宽带微波吸收器的通用合成技术
本文介绍了一类新型高阶超宽带微波吸收剂的综合合成技术。首先,基于多级阻抗匹配网络原理,提出了高阶超宽带微波吸收器的广义电路模型,该模型的频率响应可以在较宽的频率范围内用一类切比雪夫多项式合成。根据合成程序,可以精确地计算出任意分数带宽和吸收带最小回波损耗的所有电路参数。随后,通过刻蚀槽线和嵌入电阻的堆叠印刷电路板块实现物理结构。在周期边界条件下,高精度地提取了槽线的物理参数。然后用不同的设计规范设计、制造和测量四阶和五阶吸波器。实测结果与模拟结果吻合较好。此外,即使暴露在50°斜入射下,两种吸收器设计也表现出良好的角稳定性。因此,所提出的广义电路模型和综合方法得到了明显的验证,可以为这种高阶超宽带微波吸收器的设计提供一种高效、准确的解决方案。此外,它提供更宽的吸收带,同时利用最少数量的电阻,使其在广泛的应用中非常实用。
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来源期刊
CiteScore
4.80
自引率
19.00%
发文量
235
审稿时长
2.3 months
期刊介绍: IEEE Transactions on Electromagnetic Compatibility publishes original and significant contributions related to all disciplines of electromagnetic compatibility (EMC) and relevant methods to predict, assess and prevent electromagnetic interference (EMI) and increase device/product immunity. The scope of the publication includes, but is not limited to Electromagnetic Environments; Interference Control; EMC and EMI Modeling; High Power Electromagnetics; EMC Standards, Methods of EMC Measurements; Computational Electromagnetics and Signal and Power Integrity, as applied or directly related to Electromagnetic Compatibility problems; Transmission Lines; Electrostatic Discharge and Lightning Effects; EMC in Wireless and Optical Technologies; EMC in Printed Circuit Board and System Design.
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