The role of grain boundary and alloy scattering within the Callaway model to calculate lattice thermal conductivity in GaN/AlN superlattice

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Physica B-condensed Matter Pub Date : 2024-09-10 DOI:10.1016/j.physb.2024.416530
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Abstract

The grain boundary and alloy scattering within the Debye-Callaway model were introduced to calculate the temperature-dependent lattice thermal conductivity (LTC) in the GaN/AlN superlattice. The superlattice layers are assumed to be grains, and the sample is then treated as a multigrain material. The computations include various physical parameters related to Aluminum alloy compositions, such as Debye temperature, atomic mass, lattice volume, density, alloy scattering factor and deformation energy. In general, the sample size effect on LTC in this superlattice structure was similar to any single component solids, but it has a significant influence from the grain boundaries represented by the thickness of layers in the form of LTCPeakpoint.=5.9925e0.0005L2 at the peak point maximum and LTC(600K)=0.344L at 600K, L is the sample size. The dislocations in these samples are controlled by the inbuilt AlN layers with the dependence of NDisl.=0.542LAlN+7.4.

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卡拉韦模型中晶界和合金散射在计算氮化镓/氮化铝超晶格热导率中的作用
在 Debye-Callaway 模型中引入了晶界和合金散射,以计算 GaN/AlN 超晶格中随温度变化的晶格热导率 (LTC)。超晶格层被假定为晶粒,然后样品被视为多晶粒材料。计算包括与铝合金成分有关的各种物理参数,如德拜温度、原子质量、晶格体积、密度、合金散射系数和变形能。一般来说,在这种超晶格结构中,样品尺寸对 LTC 的影响与任何单组分固体相似,但它对晶界的影响很大,晶界由层厚度表示,其形式为峰值点最大时的 LTCPeakpoint.=5.9925e0.0005L2 和 600K 时的 LTC(600K)=0.344L,L 为样品尺寸。这些样品中的位错由内置的 AlN 层控制,其相关系数为 NDisl.=-0.542LAlN+7.4。
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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