Novel Prediction Using TB-mBJ of Electronic Properties, Magnetic Exchange Couplings, and Half-Metallicity in CrCaSe Materials

IF 0.5 4区 物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2024-09-09 DOI:10.1134/S1068337224700063
H. R. Sahraoui, B. Doumi, A. Mokaddem, D. Bensaid, M. Boutaleb, A. Tadjer, A. Yakoubi, A. Sayede
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Abstract

In this study, we have performed investigations on the structural stability, electronic band structures, magnetic exchange couplings, and half-metallic performance of CrxCa1– xSe materials using computational methods of density functional theory via GGA-WC, GGA-PBE and, TB-mBJ exchange-correlation potentials. The CrxCa1–xSe compounds are thermodynamically stable and synthesizable owing to their negative formation energies. The structural parameters of CrxCa1–xSe with GGA-WC and GGA-PBE approximations appear to be in excellent concordance compared to the experimental data and recent theoretical calculations. According to GGA-PBE and TB-mBJ calculations, the CrxCa1–xSe compounds revealed integral magnetic moments and a half-metallic behavior with better half-metallic gaps, and spin-polarization of 100%. The CrxCa1–xSe alloys appear to be better materials for use in spintronic devices.

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利用 TB-mBJ 对 CrCaSe 材料的电子特性、磁交换耦合和半金属性进行新颖预测
摘要 在这项研究中,我们利用密度泛函理论的计算方法,通过 GGA-WC、GGA-PBE 和 TB-mBJ 交换相关势,对 CrxCa1- xSe 材料的结构稳定性、电子能带结构、磁交换耦合和半金属性能进行了研究。由于 CrxCa1-xSe 的负形成能,它们在热力学上是稳定和可合成的。用 GGA-WC 和 GGA-PBE 近似计算得出的 CrxCa1-xSe 结构参数与实验数据和最近的理论计算结果非常吻合。根据 GGA-PBE 和 TB-mBJ 计算,CrxCa1-xSe 化合物显示出积分磁矩和半金属行为,具有较好的半金属间隙和 100% 的自旋极化。CrxCa1-xSe 合金似乎是用于自旋电子器件的更好材料。
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来源期刊
CiteScore
1.00
自引率
66.70%
发文量
43
审稿时长
6-12 weeks
期刊介绍: Journal of Contemporary Physics (Armenian Academy of Sciences) is a journal that covers all fields of modern physics. It publishes significant contributions in such areas of theoretical and applied science as interaction of elementary particles at superhigh energies, elementary particle physics, charged particle interactions with matter, physics of semiconductors and semiconductor devices, physics of condensed matter, radiophysics and radioelectronics, optics and quantum electronics, quantum size effects, nanophysics, sensorics, and superconductivity.
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