{"title":"Wettability of Black Silicon Layers Formed by Different Methods","authors":"G. Y. Ayvazyan, A. A. Vardanyan, A. V. Semchenko","doi":"10.1134/S1068337224700105","DOIUrl":null,"url":null,"abstract":"<p>The wettability of black silicon (b-Si) layers formed by reactive ion etching, metal-assisted chemical etching, and laser-induced etching has been studied. The wetting contact angles of the prepared samples with deionized water, glycerol, diiodomethane, and ethylene glycol were determined. It has been shown that the silicon oxide surface film and the enlargement area factor of b-Si layers have a significant influence on their wettability, varying from hydrophilic to hydrophobic properties.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"59 1","pages":"85 - 90"},"PeriodicalIF":0.5000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Contemporary Physics (Armenian Academy of Sciences)","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S1068337224700105","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The wettability of black silicon (b-Si) layers formed by reactive ion etching, metal-assisted chemical etching, and laser-induced etching has been studied. The wetting contact angles of the prepared samples with deionized water, glycerol, diiodomethane, and ethylene glycol were determined. It has been shown that the silicon oxide surface film and the enlargement area factor of b-Si layers have a significant influence on their wettability, varying from hydrophilic to hydrophobic properties.
期刊介绍：
Journal of Contemporary Physics (Armenian Academy of Sciences) is a journal that covers all fields of modern physics. It publishes significant contributions in such areas of theoretical and applied science as interaction of elementary particles at superhigh energies, elementary particle physics, charged particle interactions with matter, physics of semiconductors and semiconductor devices, physics of condensed matter, radiophysics and radioelectronics, optics and quantum electronics, quantum size effects, nanophysics, sensorics, and superconductivity.
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