Impact of external magnetic fields on STT-MRAM

arXiv - PHYS - Applied Physics Pub Date : 2024-09-09 DOI:arxiv-2409.05584

Bernard Dieny, Sanjeev Aggarwal, Vinayak Bharat Naik, Sebastien Couet, Thomas Coughlin, Shunsuke Fukami, Kevin Garello, Jack Guedj, Jean Anne C. Incorvia, Laurent Lebrun, Kyung-Jin Lee, Daniele Leonelli, Yonghwan Noh, Siamak Salimy, Steven Soss, Luc Thomas, Weigang Wang, Daniel Worledge

{"title":"Impact of external magnetic fields on STT-MRAM","authors":"Bernard Dieny, Sanjeev Aggarwal, Vinayak Bharat Naik, Sebastien Couet, Thomas Coughlin, Shunsuke Fukami, Kevin Garello, Jack Guedj, Jean Anne C. Incorvia, Laurent Lebrun, Kyung-Jin Lee, Daniele Leonelli, Yonghwan Noh, Siamak Salimy, Steven Soss, Luc Thomas, Weigang Wang, Daniel Worledge","doi":"arxiv-2409.05584","DOIUrl":null,"url":null,"abstract":"This application note discusses the working principle of spin-transfer torque\nmagnetoresistive random access memory (STT-MRAM) and the impact that magnetic\nfields can have on STT-MRAM operation. Sources of magnetic field and typical\nmagnitudes of magnetic fields are given. Based on the magnitude of commonly\nencountered external magnetic fields, we show below that magnetic immunity of\nSTT-MRAM is sufficient for most uses once the chip is mounted on a printed\ncircuit board (PCB) or inserted in its working environment. This statement is\nsupported by the experience acquired during 60 years of use of magnetic hard\ndisk drives (HDD) including 20 years of HDD with readers comprising magnetic\ntunnel junctions, 20+ years of use of magnetic field sensors as position\nencoders in automotive industry and 15+ years of use of MRAM. Mainly during\nchip handling does caution need to be exercised to avoid exposing the chip to\nexcessively high magnetic fields.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.05584","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical magnitudes of magnetic fields are given. Based on the magnitude of commonly encountered external magnetic fields, we show below that magnetic immunity of STT-MRAM is sufficient for most uses once the chip is mounted on a printed circuit board (PCB) or inserted in its working environment. This statement is supported by the experience acquired during 60 years of use of magnetic hard disk drives (HDD) including 20 years of HDD with readers comprising magnetic tunnel junctions, 20+ years of use of magnetic field sensors as position encoders in automotive industry and 15+ years of use of MRAM. Mainly during chip handling does caution need to be exercised to avoid exposing the chip to excessively high magnetic fields.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

外部磁场对 STT-MRAM 的影响

本应用说明讨论了自旋转移转矩磁阻随机存取存储器（STT-MRAM）的工作原理以及磁场对 STT-MRAM 运行的影响。文中给出了磁场的来源和典型磁场幅度。根据常见外部磁场的大小，我们在下文中指出，一旦芯片安装到印刷电路板 (PCB) 上或插入工作环境中，STT-MRAM 的抗磁性足以满足大多数用途。磁性硬盘驱动器 (HDD) 60 年的使用经验（包括 20 年带有磁隧道连接读取器的 HDD）、汽车行业 20 多年用作位置编码器的磁场传感器以及 15 多年的 MRAM 使用经验都证明了这一点。主要是在芯片处理过程中需要小心谨慎，避免芯片暴露在过高的磁场中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

arXiv - PHYS - Applied Physics

自引率

0.00%

发文量