V. D. Zhivulko, A. V. Mudryi, O M. Borodavchenko, E. V. Lutsenko, V. N. Pavlovskii, G. P. Yablonskii, M. V. Yakushev
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引用次数: 0
Abstract
The effect of irradiation with different doses of 4-MeV electrons on radiative recombination of nonequilibrium charge carriers in Cu(In,Ga)(S,Se)2 thin films of solar cells was studied. Near-edge photoluminescence (PL) in the energy range ~0.9–1.2 eV in nonirradiated and irradiated direct-gap Cu(In,Ga)(S,Se)2 solid solutions was caused by optical interband transitions and radiative recombination through energy levels of acceptor- and donor-type structure defects in the presence of strong potential fluctuations. PL spectra measured in the temperature range 5–300 K exhibited energy shifts of the near-edge PL band maxima and redistributions of their intensities in thin films after irradiation with different doses of electrons. The activation energies of nonradiative recombination were determined from the quenching of PL band intensities. The possible nature of structural defects in nonirradiated and electron-irradiated Cu(In,Ga)(S,Se)2 solid solutions was discussed.
期刊介绍:
Journal of Applied Spectroscopy reports on many key applications of spectroscopy in chemistry, physics, metallurgy, and biology. An increasing number of papers focus on the theory of lasers, as well as the tremendous potential for the practical applications of lasers in numerous fields and industries.