Effect of 4-MeV Electron Irradiation on Radiative Recombination of Cu(In,Ga)(S,Se)2 Thin Films in Solar Cells

IF 0.8 4区 化学 Q4 SPECTROSCOPY Journal of Applied Spectroscopy Pub Date : 2024-09-12 DOI:10.1007/s10812-024-01778-w
V. D. Zhivulko, A. V. Mudryi, O M. Borodavchenko, E. V. Lutsenko, V. N. Pavlovskii, G. P. Yablonskii, M. V. Yakushev
{"title":"Effect of 4-MeV Electron Irradiation on Radiative Recombination of Cu(In,Ga)(S,Se)2 Thin Films in Solar Cells","authors":"V. D. Zhivulko, A. V. Mudryi, O M. Borodavchenko, E. V. Lutsenko, V. N. Pavlovskii, G. P. Yablonskii, M. V. Yakushev","doi":"10.1007/s10812-024-01778-w","DOIUrl":null,"url":null,"abstract":"<p>The effect of irradiation with different doses of 4-MeV electrons on radiative recombination of nonequilibrium charge carriers in Cu(In,Ga)(S,Se)<sub>2</sub> thin films of solar cells was studied. Near-edge photoluminescence (PL) in the energy range ~0.9–1.2 eV in nonirradiated and irradiated direct-gap Cu(In,Ga)(S,Se)<sub>2</sub> solid solutions was caused by optical interband transitions and radiative recombination through energy levels of acceptor- and donor-type structure defects in the presence of strong potential fluctuations. PL spectra measured in the temperature range 5–300 K exhibited energy shifts of the near-edge PL band maxima and redistributions of their intensities in thin films after irradiation with different doses of electrons. The activation energies of nonradiative recombination were determined from the quenching of PL band intensities. The possible nature of structural defects in nonirradiated and electron-irradiated Cu(In,Ga)(S,Se)<sub>2</sub> solid solutions was discussed.</p>","PeriodicalId":609,"journal":{"name":"Journal of Applied Spectroscopy","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Spectroscopy","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1007/s10812-024-01778-w","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"SPECTROSCOPY","Score":null,"Total":0}
引用次数: 0

Abstract

The effect of irradiation with different doses of 4-MeV electrons on radiative recombination of nonequilibrium charge carriers in Cu(In,Ga)(S,Se)2 thin films of solar cells was studied. Near-edge photoluminescence (PL) in the energy range ~0.9–1.2 eV in nonirradiated and irradiated direct-gap Cu(In,Ga)(S,Se)2 solid solutions was caused by optical interband transitions and radiative recombination through energy levels of acceptor- and donor-type structure defects in the presence of strong potential fluctuations. PL spectra measured in the temperature range 5–300 K exhibited energy shifts of the near-edge PL band maxima and redistributions of their intensities in thin films after irradiation with different doses of electrons. The activation energies of nonradiative recombination were determined from the quenching of PL band intensities. The possible nature of structural defects in nonirradiated and electron-irradiated Cu(In,Ga)(S,Se)2 solid solutions was discussed.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
4-MeV 电子辐照对太阳能电池中 Cu(In,Ga)(S,Se)2 薄膜辐射重组的影响
研究了不同剂量的 4-MeV 电子辐照对太阳能电池 Cu(In,Ga)(S,Se)2 薄膜中非平衡态电荷载流子辐射重组的影响。非辐照和辐照直接隙 Cu(In,Ga)(S,Se)2固溶体在 ~0.9-1.2 eV 能量范围内的近边光致发光 (PL) 是由光学带间跃迁以及在强电位波动下通过受体和供体型结构缺陷的能级发生的辐射重组引起的。在 5-300 K 温度范围内测量的 PL 光谱显示,在不同剂量的电子辐照后,薄膜中的近边 PL 带最大值发生了能量移动,其强度也发生了重新分布。非辐射重组的活化能是根据聚光带强度的淬灭确定的。讨论了未辐照和电子辐照 Cu(In,Ga)(S,Se)2 固溶体中结构缺陷的可能性质。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
1.30
自引率
14.30%
发文量
145
审稿时长
2.5 months
期刊介绍: Journal of Applied Spectroscopy reports on many key applications of spectroscopy in chemistry, physics, metallurgy, and biology. An increasing number of papers focus on the theory of lasers, as well as the tremendous potential for the practical applications of lasers in numerous fields and industries.
期刊最新文献
Influence of Rare Earth Yb3+ Dopant on the Spectroscopic Properties of Manganese Ferrite Nanoparticles Structural and Photoluminescence Studies of p-(n-heptyl) Benzoic Acid Liquid Crystals Dispersed with ZnO Nanoparticles Spectroscopic Studies on Plant Extract Mediated ZnO Nanoparticles as a Potential Cytotoxic Agent Influence of Interatomic Collisions on Intra-Doppler Absorption Resonances in Thin Gas Cells Study on the Detection Method of Soil-Motor Oil Contamination Combined with Genetic Algorithm Spectral Wavelength Selection
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1