Biologically inspired tonic and bursting LIF neuron model for spiking neural network: a CMOS implementation

M. A. Seenivasan, Adarsh V. Parekkattil, Rekib Uddin Ahmed, Prabir Saha
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Abstract

The human brain has been encompassed by neurons and synapses, where the signal is propagated as a spike. This perception seeks to create hardware systems called neural cores that are comprised of artificial bio-neurons and synapses; these systems resemble the brain’s functions and emulate the different spiking patterns to operate the neuromorphic processors. Through this motivation, the paper presents a low-power Schmitt trigger-based Leaky Integrate and Fire (LIF) neuron model that offers significantly less energy per spike and showcases the dynamic spike frequency and refractory periods that are regulated by the membrane and reset capacitance in addition to refractory circuitry. The incorporation of a hysteresis comparator, e.g., the Schmitt trigger, enhances noise immunity and facilitates dynamic threshold adjustments, enabling faster switching and reducing energy consumption. The neuron models are simulated in Cadence Virtuoso GPDK 45 nm Technology to obtain dynamic tonic and burst spiking patterns; subsequently, the significantly smaller spike pulse width of the proposed model is measured from the dynamic pattern as 1.867 ns, and the refractory period is measured as 0.2 ns respectively. This proposed model consumes less energy, 524.415aJ per spike, under the 1 V power supply and 1 ms step pulse. Typically, the spike pulses have different shapes and magnitudes based on the functions of membrane potential, which are applicable to realize the spiking behavior of SNNs.

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用于尖峰神经网络的受生物启发的强直和猝发 LIF 神经元模型:CMOS 实现
人脑由神经元和突触组成,信号以尖峰的形式传播。这种认知试图创建由人工生物神经元和突触组成的名为神经核的硬件系统;这些系统类似于大脑的功能,并模拟不同的尖峰模式来操作神经形态处理器。基于这一动机,本文介绍了一种基于施密特触发器的低功耗 "漏电积分与点火"(LIF)神经元模型,该模型可显著降低每次尖峰的能量,并展示动态尖峰频率和折射周期,这些频率和周期除折射电路外,还受膜和复位电容的调节。迟滞比较器(如施密特触发器)的加入增强了抗噪能力,并促进了动态阈值调整,从而加快了开关速度并降低了能耗。在 Cadence Virtuoso GPDK 45 nm 技术中对神经元模型进行了仿真,获得了动态强直性和爆发性尖峰模式;随后,从动态模式测得的尖峰脉冲宽度和折射周期分别为 1.867 ns 和 0.2 ns。在 1 V 电源和 1 ms 阶跃脉冲条件下,该模型消耗的能量更少,每个尖峰为 524.415aJ 。通常情况下,尖峰脉冲根据膜电位的函数具有不同的形状和大小,适用于实现 SNN 的尖峰行为。
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