Electrochemical Deposition of Iridium onto Gallium Arsenide from a Sulfamate Electrolyte Based on Hexachloroiridic(IV) Acid

IF 0.6 4区 化学 Q4 CHEMISTRY, APPLIED Russian Journal of Applied Chemistry Pub Date : 2024-08-21 DOI:10.1134/S1070427223120066
T. P. Bekezina, M. S. Vaisbekker, V. A. Burmistrova, V. G. Bozhkov
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Abstract

The nature of cathodic polarization in an iridium-plating electrolyte based on a sulfamate solution of H2[IrCl6] was studied. Spectroscopic analysis shows that the iridium electrolyte contains binuclear oxygen-bridged Ir(III, IV) sulfamate complexes. The microstructure and distribution profiles of the iridium deposit in contacts of different diameters were studied. The structure of the iridium deposit is highly dispersed. The nonuniformity of the iridium deposit profile over the contact area and the dependence of the deposit thickness on the contact diameter can be reduced by varying the hydrodynamic conditions of the metal electroplating (stirring of the electrolyte with a magnetic stirrer or ultrasound) and by using electrochemical polarization. The Ir–GaAs contacts with the Schottky barrier are characterized by high quality of electrophysical parameters and good reproducibility of the volt–ampere characteristics. A decrease in the thickness of the iridium deposit and of the n-GaAs epitaxial layer leads to an increase in the barrier height of the rectifying Ir–GaAs contacts.

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基于六氯铱铱(IV)酸的氨基磺酸电解质在砷化镓上电化学沉积铱
摘要 研究了基于 H2[IrCl6]氨基磺酸盐溶液的镀铱电解液中阴极极化的性质。光谱分析表明,镀铱电解液中含有双核氧桥Ir(III,IV)氨基磺酸盐络合物。研究了不同直径触头中铱沉积物的微观结构和分布曲线。铱沉积物的结构高度分散。通过改变金属电镀的流体力学条件(用磁力搅拌器或超声波搅拌电解液)和使用电化学极化,可以减少铱沉积物在触点区域的不均匀性以及沉积物厚度对触点直径的依赖性。带有肖特基势垒的 Ir-GaAs 触点具有高质量的电物理参数和良好的伏安特性重现性。铱沉积层和 n-GaAs 外延层厚度的减少导致整流 Ir-GaAs 触点的势垒高度增加。
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来源期刊
CiteScore
1.60
自引率
11.10%
发文量
63
审稿时长
2-4 weeks
期刊介绍: Russian Journal of Applied Chemistry (Zhurnal prikladnoi khimii) was founded in 1928. It covers all application problems of modern chemistry, including the structure of inorganic and organic compounds, kinetics and mechanisms of chemical reactions, problems of chemical processes and apparatus, borderline problems of chemistry, and applied research.
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