Bismuth Ordering and Optical Anisotropy in GaAsBi Alloys

Abstract

Reflectance anisotropy spectroscopy (RAS) is applied to investigate GaAsBi samples grown by molecular beam epitaxy on (001)‐oriented GaAs substrates with GaAs or InGaAs buffer layers, resulting in nearly lattice‐matched or compressive strain conditions, with Bi concentration in the alloy in the range 2–5%. These new samples allow to bridge the gap in the Bi concentration values of previous RAS experiments (C. Goletti et al., Appl. Phys. Lett. 2022, 120, 031902), confirming the [110]‐polarized Bi‐related anisotropy in optical spectra below 3 eV and the linear dependence of its amplitude on Bi concentration. The characterization of the grown GaAsBi samples by X‐Ray diffraction and transmission electron microscopy clearly demonstrates the presence of CuPt‐like ordering in the bulk. CuPt structure is the primary origin of the optical anisotropy measured by RAS and by polarized photoluminescence, due to the anisotropic strain produced in the bulk crystal lattice. The lineshape of the RAS spectra above 3 eV, with its overall and characteristic positive convexity, confirms this conclusion.