Yang Dai, Ruosong Yuan, Yukun Li, Leiyu Gao, Yiting Zhang, Pengzhan Wang, Yunyao Zhang, Xiaoyi Lei, Han Zhang, Wu Zhao
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引用次数: 0
Abstract
The THz photoresponse of four different structures of N‐ and Ga‐polar AlGaN/GaN plasma wave high‐electron‐mobility transistors (HEMTs) has been comparatively investigated. Based on these results, an improved N‐polar plasma wave HEMT detector is proposed: an AlGaN cap layer is introduced in the standard N‐polar HEMT, so as to obtain a lower gate leakage current, thus improving the operating characteristics of plasma wave HEMT. The results show that the responsivity of the improved N‐polar HEMT obtains a significant improvement and as the Al component of AlGaN cap layer increases, the noise equivalent power of the improved N‐polar HEMT has also been optimized.
我们对四种不同结构的 N 极和 Ga 极 AlGaN/GaN 等离子体波高电子迁移率晶体管（HEMT）的太赫兹光响应进行了比较研究。根据这些结果，提出了一种改进的 N 极等离子体波 HEMT 检测器：在标准 N 极 HEMT 中引入 AlGaN 盖层，以获得更低的栅极漏电流，从而改善等离子体波 HEMT 的工作特性。结果表明，改进型 N 极 HEMT 的响应率得到了显著提高，而且随着 AlGaN 盖层中 Al 成分的增加，改进型 N 极 HEMT 的噪声等效功率也得到了优化。
期刊介绍：
physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Being among the largest and most important international publications, the pss journals publish review articles, letters and original work as well as special issues and conference contributions.
physica status solidi b – basic solid state physics is devoted to topics such as theoretical and experimental investigations of the atomistic and electronic structure of solids in general, phase transitions, electronic and optical properties of low-dimensional, nano-scale, strongly correlated, or disordered systems, superconductivity, magnetism, ferroelectricity etc.
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