An energy and information analysis method of logic gates based on stochastic thermodynamics

Xiaohu Ge, Muyao Ruan, Xiaoxuan Peng, Yong Xiao, Yang Yang
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Abstract

To reduce the energy consumption of logic gates in digital circuits, the size of transistors approaches the mesoscopic scale, e.g., sub-7 nanometers (nm). However, existing energy consumption analysis methods exhibit various deviation for logic gates when the non-equilibrium information processing of mesoscopic scale transistors with ultra-low voltages is analyzed. Based on the stochastic thermodynamics theory, an information energy ratio method is proposed for the energy consumption estimation of XOR gates composed of mesoscopic scale transistors. The proposed method provides a new insight to quantify the transformation between the information capacity and energy consumption for XOR gates and extending to other logic gates. Utilizing the proposed analysis method, the supply voltage of the parity check circuit can be optimized by numerical simulations without expensive and complex practical measurements. The information energy ratio is the first analytical method to quantify the energy and information transformation of logic gates at the mesoscopic scale.
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基于随机热力学的逻辑门能量和信息分析方法
为了降低数字电路中逻辑门的能耗,晶体管的尺寸已接近介观尺度,如 7 纳米以下。然而,现有的能耗分析方法在分析超低电压介观尺度晶体管的非平衡信息处理时,逻辑门的能耗会出现各种偏差。基于随机热力学理论,我们提出了一种信息能量比方法,用于估算由介观尺度晶体管组成的 XOR 门的能耗。提出的方法为量化 XOR 门的信息容量和能耗之间的转换提供了新的见解,并可扩展到其他逻辑门。利用提出的分析方法,可以通过数值模拟优化奇偶校验电路的电源电压,而无需昂贵而复杂的实际测量。信息能量比是第一种在介观尺度上量化逻辑门能量和信息转换的分析方法。
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