Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY APL Materials Pub Date : 2024-09-11 DOI:10.1063/5.0225570
Hemant Ghadi, Evan Cornuellue, Joe F. Mcglone, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Steven A. Ringel
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Abstract

This study provides a comprehensive analysis of the dominant deep acceptor level in nitrogen-doped beta-phase gallium oxide (β-Ga2O3), elucidating and reconciling the hole emission features observed in deep-level optical spectroscopy (DLOS). The unique behavior of this defect, coupled with its small optical cross section, complicates trap concentration analysis using DLOS, which is essential for defect characterization in β-Ga2O3. A complex feature arises in DLOS results due to simultaneous electron emission to the conduction band and hole emission to the valence band from the same defect state, indicating the formation of two distinct atomic configurations and suggesting metastable defect characteristics. This study discusses the implications of this behavior on DLOS analysis and employs advanced spectroscopy techniques such as double-beam DLOS and optical isothermal measurements to address these complications. The double-beam DLOS method reveals a distinct hole emission process at EV+1.3 eV previously obscured in conventional DLOS. Optical isothermal measurements further characterize this energy level, appearing only in N-doped β-Ga2O3. This enables an estimate of the β-Ga2O3 hole effective mass by analyzing temperature-dependent carrier emission rates. This work highlights the impact of partial trap-filling behavior on DLOS analysis and identifies the presence of hole trapping and emission in β-Ga2O3. Although N-doping is ideal for creating semi-insulating material through the efficient compensation of free electrons, this study also reveals a significant hole emission and migration process within the weak electric fields of the Schottky diode depletion region.
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利用定量光学和热缺陷光谱法全面表征 β-Ga2O3 中的氮相关缺陷态
本研究全面分析了掺氮β相氧化镓(β-Ga2O3)中的主要深层受体水平,阐明并协调了在深层光学光谱(DLOS)中观察到的空穴发射特征。这种缺陷的独特行为加上其较小的光学截面,使得使用 DLOS 进行陷阱浓度分析变得复杂,而 DLOS 是表征 β-Ga2O3 缺陷的关键。由于同一缺陷态同时向导带发射电子和向价带发射空穴,在 DLOS 结果中出现了一个复杂的特征,表明形成了两种不同的原子构型,并暗示了陨落缺陷的特征。本研究讨论了这种行为对 DLOS 分析的影响,并采用双光束 DLOS 和光学等温测量等先进光谱技术来解决这些复杂问题。双光束 DLOS 方法揭示了在 EV+1.3 eV 处的独特空穴发射过程,而这一过程在传统 DLOS 中是模糊的。光学等温测量进一步确定了这一能级的特征,它只出现在掺杂 N 的 β-Ga2O3 中。通过分析随温度变化的载流子发射率,可以估算出 β-Ga2O3 的空穴有效质量。这项工作强调了部分陷阱填充行为对 DLOS 分析的影响,并确定了 β-Ga2O3 中存在空穴陷阱和发射。虽然 N 掺杂是通过有效补偿自由电子来创建半绝缘材料的理想方法,但这项研究也揭示了在肖特基二极管耗尽区的弱电场中存在显著的空穴发射和迁移过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
APL Materials
APL Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
9.60
自引率
3.30%
发文量
199
审稿时长
2 months
期刊介绍: APL Materials features original, experimental research on significant topical issues within the field of materials science. In order to highlight research at the forefront of materials science, emphasis is given to the quality and timeliness of the work. The journal considers theory or calculation when the work is particularly timely and relevant to applications. In addition to regular articles, the journal also publishes Special Topics, which report on cutting-edge areas in materials science, such as Perovskite Solar Cells, 2D Materials, and Beyond Lithium Ion Batteries.
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