Poly(ether ketone ketone)/hollow silica filler substrates and application for sixth generation communication

Abstract

The influence of density and shape of hollow silicas (silica hollow tubes (SHT) or hollow glass microspheres (HGM)) on dielectric and heat-resisting characteristics of poly(ether ketone ketone) (PEKK)/SHT and PEKK/HGM films was systematically investigated. The dielectric characteristics of PEKK/SHT or PEKK/HGM films decrease to a minimum, as their SHT or HGM contents approach 8 or 20 wt%, respectively, and the minimum dielectric constant (ε_r) and dielectric loss (tan δ) of PEKK/SHT or PEKK/HGM films decrease visibly with decreasing SHT densities. By filling with 0.46 g cm⁻³ mean density of SHT or HGM fillers, the minimum ε_r and tan δ of PEKK/SHT films are somewhat smaller than those of PEKK/HGM films. The linear coefficient of thermal expansion (LCTE) values of PEKK/SHT or PEKK/HGM films reduce and their onset degradation temperature values increase gradually with increasing SHT and HGM contents. Low ε_r/tan δ (2.11/0.0022 and 2.2/0.0027 at 1 MHz), LCTE (35.5 × 10⁻⁶ and 31.2 × 10⁻⁶ °C⁻¹) and excellent heat-resisting properties favorable for sixth generation (6G) ultrarapid communication are realized for appropriately prepared PEKK/SHT and PEKK/HGM substrate films. The free-volume-hole characteristics of PEKK/HGM or PEKK/SHT films approach a maximum as SHT or HGM contents reach an optimum value of 8 or 20 wt%, respectively. © 2024 Society of Chemical Industry.