Poly(ether ketone ketone)/hollow silica filler substrates and application for sixth generation communication

IF 2.9 4区化学 Q2 POLYMER SCIENCE Polymer International Pub Date : 2024-08-27 DOI:10.1002/pi.6690

Xing-yu Wei, Zhi-wen Lei, Ning Ma, Tim Hsu, Ya-qiong Huang, Jen-taut Yeh

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Abstract

The influence of density and shape of hollow silicas (silica hollow tubes (SHT) or hollow glass microspheres (HGM)) on dielectric and heat-resisting characteristics of poly(ether ketone ketone) (PEKK)/SHT and PEKK/HGM films was systematically investigated. The dielectric characteristics of PEKK/SHT or PEKK/HGM films decrease to a minimum, as their SHT or HGM contents approach 8 or 20 wt%, respectively, and the minimum dielectric constant (ε_r) and dielectric loss (tan δ) of PEKK/SHT or PEKK/HGM films decrease visibly with decreasing SHT densities. By filling with 0.46 g cm⁻³ mean density of SHT or HGM fillers, the minimum ε_r and tan δ of PEKK/SHT films are somewhat smaller than those of PEKK/HGM films. The linear coefficient of thermal expansion (LCTE) values of PEKK/SHT or PEKK/HGM films reduce and their onset degradation temperature values increase gradually with increasing SHT and HGM contents. Low ε_r/tan δ (2.11/0.0022 and 2.2/0.0027 at 1 MHz), LCTE (35.5 × 10⁻⁶ and 31.2 × 10⁻⁶ °C⁻¹) and excellent heat-resisting properties favorable for sixth generation (6G) ultrarapid communication are realized for appropriately prepared PEKK/SHT and PEKK/HGM substrate films. The free-volume-hole characteristics of PEKK/HGM or PEKK/SHT films approach a maximum as SHT or HGM contents reach an optimum value of 8 or 20 wt%, respectively. © 2024 Society of Chemical Industry.

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聚醚酮酮/中空二氧化硅填料基材及在第六代通信中的应用

系统研究了空心二氧化硅（二氧化硅空心管（SHT）或空心玻璃微球（HGM））的密度和形状对聚（醚酮酮）（PEKK）/SHT 和 PEKK/HGM 薄膜介电和耐热特性的影响。随着 SHT 或 HGM 含量分别接近 8 或 20 wt%，PEKK/SHT 或 PEKK/HGM 薄膜的介电特性降至最低，并且 PEKK/SHT 或 PEKK/HGM 薄膜的最小介电常数（εr）和介电损耗（tan δ）随着 SHT 密度的降低而明显降低。通过填充平均密度为 0.46 g cm-3 的 SHT 或 HGM 填料，PEKK/SHT 薄膜的最小值 εr 和 tan δ 比 PEKK/HGM 薄膜略小。随着 SHT 和 HGM 含量的增加，PEKK/SHT 或 PEKK/HGM 薄膜的线性热膨胀系数（LCTE）值降低，开始降解温度值逐渐升高。适当制备的 PEKK/SHT 和 PEKK/HGM 基底薄膜具有低 εr/tan δ（2.11/0.0022 和 2.2/0.0027，1 MHz 时）、LCTE（35.5 × 10-6 和 31.2 × 10-6 ℃-1）和优异的耐热性能，有利于第六代（6G）超高速通信。当 SHT 或 HGM 含量分别达到 8 或 20 wt% 的最佳值时，PEKK/HGM 或 PEKK/SHT 薄膜的自由体积孔特性接近最大值。© 2024 化学工业协会。

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来源期刊

Polymer International 化学-高分子科学

CiteScore

7.10

自引率

3.10%

发文量

135

审稿时长

4.3 months

期刊介绍： Polymer International (PI) publishes the most significant advances in macromolecular science and technology. PI especially welcomes research papers that address applications that fall within the broad headings Energy and Electronics, Biomedical Studies, and Water, Environment and Sustainability. The Journal’s editors have identified these as the major challenges facing polymer scientists worldwide. The Journal also publishes invited Review, Mini-review and Perspective papers that address these challenges and others that may be of growing or future relevance to polymer scientists and engineers.