Influence of Process Parameters on Properties of Non-Reactive RF Magnetron-Sputtered Indium Tin Oxide Thin Films Used as Electrodes for Organic Light-Emitting Diodes

Abstract

Indium tin oxide (ITO) is a transparent conductive oxide (TCO) commonly used in the realization of optoelectronic devices needing at least a transparent electrode. In this work, ITO thin films were deposited on glass substrates by non-reactive RF magnetron sputtering, investigating the effects of power density, sputtering pressure, and substrate temperature on the electrical, optical, and structural properties of the as-grown films. High-quality films, in terms of crystallinity, transparency, and conductivity were obtained. The 120 nm thick ITO films grown at 225 °C under an argon pressure of 6.9 mbar and a sputtering power density of 2.19 W/cm2 without post-annealing treatments in an oxidizing environment showed an optical transmittance near 90% at 550 nm and a resistivity of 2.10×10−4 Ω cm. This material was applied as the electrode of simple-structure organic light-emitting diodes (OLEDs).