{"title":"Characterizing polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 at cryogenic temperature","authors":"Jiacheng Xu, Rongzong Shen, Haoji Qian, Gaobo Lin, Jiani Gu, Jian Rong, Huan Liu, Yian Ding, Miaomiao Zhang, Yan Liu, Chengji Jin, Jiajia Chen, Genquan Han","doi":"10.1063/5.0218693","DOIUrl":null,"url":null,"abstract":"We have characterized polarization switching kinetics of Hf0.5Zr0.5O2 (HZO) at cryogenic temperature (T) down to 100 K. By the nucleation-limited-switching model with Lorentzian distribution fittings, the dependences of the average switching time (log τ1) and switching time distribution (ω) on T are extracted. As T decreases from 300 to 100 K, log τ1 first rapidly decreases and then gradually stabilizes. Meanwhile, ω exhibits different trends under different external electric fields (Eext), decreasing under low Eext while increasing under high Eext, eventually stabilizing at non-zero constants. With the further decrease in T (<100 K), log τ1 and ω exhibited by HZO are almost unchanged, indicating the intrinsic properties of ferroelectric multiple domains, which are different from the prediction in previous literature studies that log τ1 and ω will linearly decrease as T decreases.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"3 1","pages":""},"PeriodicalIF":2.7000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0218693","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
We have characterized polarization switching kinetics of Hf0.5Zr0.5O2 (HZO) at cryogenic temperature (T) down to 100 K. By the nucleation-limited-switching model with Lorentzian distribution fittings, the dependences of the average switching time (log τ1) and switching time distribution (ω) on T are extracted. As T decreases from 300 to 100 K, log τ1 first rapidly decreases and then gradually stabilizes. Meanwhile, ω exhibits different trends under different external electric fields (Eext), decreasing under low Eext while increasing under high Eext, eventually stabilizing at non-zero constants. With the further decrease in T (<100 K), log τ1 and ω exhibited by HZO are almost unchanged, indicating the intrinsic properties of ferroelectric multiple domains, which are different from the prediction in previous literature studies that log τ1 and ω will linearly decrease as T decreases.
期刊介绍:
The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research.
Topics covered in JAP are diverse and reflect the most current applied physics research, including:
Dielectrics, ferroelectrics, and multiferroics-
Electrical discharges, plasmas, and plasma-surface interactions-
Emerging, interdisciplinary, and other fields of applied physics-
Magnetism, spintronics, and superconductivity-
Organic-Inorganic systems, including organic electronics-
Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena-
Physics of devices and sensors-
Physics of materials, including electrical, thermal, mechanical and other properties-
Physics of matter under extreme conditions-
Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena-
Physics of semiconductors-
Soft matter, fluids, and biophysics-
Thin films, interfaces, and surfaces