Improvement of memory storage capacity and prolongation of endurance/retention through H2 plasma treatment of IGZO/HZO structure

IF 2.7 3区 物理与天体物理 Q2 PHYSICS, APPLIED Journal of Applied Physics Pub Date : 2024-08-29 DOI:10.1063/5.0214983
Cheng-Rui Liu, Yu-Tzu Tsai, Yu-Ting Chen, Zheng-Kai Chen, Zi-Rong Huang, Sheng-Min Wang, Chia-Shuo Pai, Ying-Tsan Tang
{"title":"Improvement of memory storage capacity and prolongation of endurance/retention through H2 plasma treatment of IGZO/HZO structure","authors":"Cheng-Rui Liu, Yu-Tzu Tsai, Yu-Ting Chen, Zheng-Kai Chen, Zi-Rong Huang, Sheng-Min Wang, Chia-Shuo Pai, Ying-Tsan Tang","doi":"10.1063/5.0214983","DOIUrl":null,"url":null,"abstract":"In this study, we integrated an Indium Gallium Zinc Oxide (IGZO) channel with a superlattice of HfO2/ZrO2 (HZO) under low-thermal-budget microwave annealing to produce nearly wake-up-free ferroelectric capacitors. To eliminate the impact of trap-charges during the atomic layer deposition process, we conducted H2 plasma treatment to eliminate leak defects induced by carbon contamination and maintain neutrality to achieve high-quality IGZO/HZO interfaces, confirmed by x-ray photoelectron spectroscopy. The H2 plasma treatment improved polarization (Pr) and coercive field (Ec), reaching 2Pr: 40 μC/cm2 and Ec: 2.33 MV/cm, enabling a low-power writing speed of 30 ns with eight states (three bits per cell). The defect engineering method ensures endurance of up to 108 cycles and retains ten-year data storage at 90 °C. This research provides a new avenue for improving emerging oxide interfaces controlled by ferroelectric polarization.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0214983","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

Abstract

In this study, we integrated an Indium Gallium Zinc Oxide (IGZO) channel with a superlattice of HfO2/ZrO2 (HZO) under low-thermal-budget microwave annealing to produce nearly wake-up-free ferroelectric capacitors. To eliminate the impact of trap-charges during the atomic layer deposition process, we conducted H2 plasma treatment to eliminate leak defects induced by carbon contamination and maintain neutrality to achieve high-quality IGZO/HZO interfaces, confirmed by x-ray photoelectron spectroscopy. The H2 plasma treatment improved polarization (Pr) and coercive field (Ec), reaching 2Pr: 40 μC/cm2 and Ec: 2.33 MV/cm, enabling a low-power writing speed of 30 ns with eight states (three bits per cell). The defect engineering method ensures endurance of up to 108 cycles and retains ten-year data storage at 90 °C. This research provides a new avenue for improving emerging oxide interfaces controlled by ferroelectric polarization.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
通过对 IGZO/HZO 结构进行 H2 等离子处理,提高内存存储容量并延长续航时间/保持时间
在这项研究中,我们在低热预算微波退火条件下将氧化铟镓锌 (IGZO) 沟道与 HfO2/ZrO2 (HZO) 超晶格集成在一起,生产出了几乎无唤醒的铁电电容器。为了消除原子层沉积过程中陷阱电荷的影响,我们进行了 H2 等离子体处理,以消除碳污染引起的泄漏缺陷并保持中性,从而获得高质量的 IGZO/HZO 界面,X 射线光电子能谱证实了这一点。H2 等离子体处理改善了极化(Pr)和矫顽力场(Ec),达到了 2Pr:40 μC/cm2,Ec:2.33 MV/cm,实现了 30 ns 的低功耗写入速度和八个状态(每个单元三个比特)。缺陷工程方法可确保高达 108 个循环的耐久性,并在 90 °C 下保持十年的数据存储。这项研究为改进由铁电极化控制的新兴氧化物界面提供了一条新途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Applied Physics
Journal of Applied Physics 物理-物理:应用
CiteScore
5.40
自引率
9.40%
发文量
1534
审稿时长
2.3 months
期刊介绍: The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces
期刊最新文献
Fast inverse design of microwave and infrared Bi-stealth metamaterials based on equivalent circuit model Calibration of Jones–Wilkins–Lee equation of state for unreacted explosives with shock Hugoniot relationship and optimization algorithm Impulse coupling enhancement of aluminum targets under laser irradiation in a soft polymer confined geometry Optimal demodulation domain for microwave SQUID multiplexers in presence of readout system noise Numerical simulation of He atmospheric pressure plasma jet impinging on the tilted dielectric surface
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1