Improvement of memory storage capacity and prolongation of endurance/retention through H2 plasma treatment of IGZO/HZO structure

IF 2.7 3区 物理与天体物理 Q2 PHYSICS, APPLIED Journal of Applied Physics Pub Date : 2024-08-29 DOI:10.1063/5.0214983
Cheng-Rui Liu, Yu-Tzu Tsai, Yu-Ting Chen, Zheng-Kai Chen, Zi-Rong Huang, Sheng-Min Wang, Chia-Shuo Pai, Ying-Tsan Tang
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Abstract

In this study, we integrated an Indium Gallium Zinc Oxide (IGZO) channel with a superlattice of HfO2/ZrO2 (HZO) under low-thermal-budget microwave annealing to produce nearly wake-up-free ferroelectric capacitors. To eliminate the impact of trap-charges during the atomic layer deposition process, we conducted H2 plasma treatment to eliminate leak defects induced by carbon contamination and maintain neutrality to achieve high-quality IGZO/HZO interfaces, confirmed by x-ray photoelectron spectroscopy. The H2 plasma treatment improved polarization (Pr) and coercive field (Ec), reaching 2Pr: 40 μC/cm2 and Ec: 2.33 MV/cm, enabling a low-power writing speed of 30 ns with eight states (three bits per cell). The defect engineering method ensures endurance of up to 108 cycles and retains ten-year data storage at 90 °C. This research provides a new avenue for improving emerging oxide interfaces controlled by ferroelectric polarization.
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通过对 IGZO/HZO 结构进行 H2 等离子处理,提高内存存储容量并延长续航时间/保持时间
在这项研究中,我们在低热预算微波退火条件下将氧化铟镓锌 (IGZO) 沟道与 HfO2/ZrO2 (HZO) 超晶格集成在一起,生产出了几乎无唤醒的铁电电容器。为了消除原子层沉积过程中陷阱电荷的影响,我们进行了 H2 等离子体处理,以消除碳污染引起的泄漏缺陷并保持中性,从而获得高质量的 IGZO/HZO 界面,X 射线光电子能谱证实了这一点。H2 等离子体处理改善了极化(Pr)和矫顽力场(Ec),达到了 2Pr:40 μC/cm2,Ec:2.33 MV/cm,实现了 30 ns 的低功耗写入速度和八个状态(每个单元三个比特)。缺陷工程方法可确保高达 108 个循环的耐久性,并在 90 °C 下保持十年的数据存储。这项研究为改进由铁电极化控制的新兴氧化物界面提供了一条新途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Applied Physics
Journal of Applied Physics 物理-物理:应用
CiteScore
5.40
自引率
9.40%
发文量
1534
审稿时长
2.3 months
期刊介绍: The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces
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