{"title":"Bipolar-resistive switching characteristics in lead-free inorganic double-halide perovskite-based memory devices","authors":"Susmita Das, Prabir Kumar Haldar, Pranab Kumar Sarkar","doi":"10.1007/s12034-024-03286-1","DOIUrl":null,"url":null,"abstract":"<div><p>Owing to the increasing demands of high-density data storage double-halide perovskite-based resistive random access memory (RRAM) have recently emerged as a promising candidate in the forefront of next-generation optoelectronic memory applications. The ionic motion-based quick switching is the key feature of this kind of material, which plays a significant role in resistive switching (RS) applications. Recently, lead-free tin-based double-halide perovskites have been considered as favourable material due to their superior stability, functionality and eco-friendly nature. Here, we report the synthesis of cesium tin (IV) iodide (Cs<sub>2</sub>SnI<sub>6</sub>) perovskites. X-ray diffraction (XRD) pattern of the as-synthesized perovskite confirms the formation of Cs<sub>2</sub>SnI<sub>6</sub> material. The crystallographic data corroborate the formation of a pure cubic phase, free of any other phase at room temperature. We also studied optical properties of the sample by using the ultraviolet–visible (UV) spectra and photoluminescence (PL) spectra. A broadband at around 580 nm is observed in the UV−Vis absorption spectra. The optical band gap of the sample is found to be 1.68 eV. Cs<sub>2</sub>SnI<sub>6</sub> perovskite exhibited intense PL emission at ~540 nm. In this work, to fabricate a flexible Al/Cs<sub>2</sub>SnI<sub>6</sub>/ITO-PET memory device, we used Cs<sub>2</sub>SnI<sub>6</sub> film as a switching layer and the device exhibits bipolar RS characteristics.</p></div>","PeriodicalId":502,"journal":{"name":"Bulletin of Materials Science","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12034-024-03286-1","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Owing to the increasing demands of high-density data storage double-halide perovskite-based resistive random access memory (RRAM) have recently emerged as a promising candidate in the forefront of next-generation optoelectronic memory applications. The ionic motion-based quick switching is the key feature of this kind of material, which plays a significant role in resistive switching (RS) applications. Recently, lead-free tin-based double-halide perovskites have been considered as favourable material due to their superior stability, functionality and eco-friendly nature. Here, we report the synthesis of cesium tin (IV) iodide (Cs2SnI6) perovskites. X-ray diffraction (XRD) pattern of the as-synthesized perovskite confirms the formation of Cs2SnI6 material. The crystallographic data corroborate the formation of a pure cubic phase, free of any other phase at room temperature. We also studied optical properties of the sample by using the ultraviolet–visible (UV) spectra and photoluminescence (PL) spectra. A broadband at around 580 nm is observed in the UV−Vis absorption spectra. The optical band gap of the sample is found to be 1.68 eV. Cs2SnI6 perovskite exhibited intense PL emission at ~540 nm. In this work, to fabricate a flexible Al/Cs2SnI6/ITO-PET memory device, we used Cs2SnI6 film as a switching layer and the device exhibits bipolar RS characteristics.
期刊介绍:
The Bulletin of Materials Science is a bi-monthly journal being published by the Indian Academy of Sciences in collaboration with the Materials Research Society of India and the Indian National Science Academy. The journal publishes original research articles, review articles and rapid communications in all areas of materials science. The journal also publishes from time to time important Conference Symposia/ Proceedings which are of interest to materials scientists. It has an International Advisory Editorial Board and an Editorial Committee. The Bulletin accords high importance to the quality of articles published and to keep at a minimum the processing time of papers submitted for publication.